Abstract: Disclosed is a sealing member for connecting pipes including a body portion provided between an outer surface of a pipe and an inner surface of a connector into which the pipe is inserted and formed in a ring shape by extending along a circumferential direction; and wing portions formed protruding from the body portion and contacting an area in contact with the outer surface of the pipe to be disposed spacing apart from each other on both sides along the width direction of the body portion, wherein the pipe is deformable by an external force in a state in which the wing portions are formed in line contact with the outer surface of the pipe, respectively.

Abstract: An insert type pipe connecting device includes a fitting unit which includes a first body into which a first pipe is inserted and a second body which has a pipe insertion space therein together with the first body and into which a second pipe is inserted, and has opening portions formed at both ends, and includes extension portions having relatively larger inner diameters than the pipes in the first body and the second body; a sealing member which is inserted into the extension portion; a compression unit which is configured independently of the sealing unit in the extension portion; a backup unit which is formed in a ring shape and configured to surround the outer diameter of the first pipe or the second pipe in the extension portion; and a support unit which is coupled to the opening portion at a rear end of the extension portion.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A fitting apparatus for connecting pipes according to the present invention includes a fitting unit which includes a first body into which a first pipe is inserted and a second body which is connected to the first body to form a pipe insertion space therein together with the first body and into which a second pipe is inserted, wherein in the first body and the second body, a first recessed groove and a second recessed groove spaced apart inward from the first recessed groove are formed along an inner circumferential surface thereof, respectively, a compression member which is provided in the first recessed groove to compress and fix the first pipe or the second pipe, and a sealing member which is provided in the second recessed groove to maintain airtightness between the fitting unit and the first pipe or between the fitting unit and the second pipe.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: Disclosed is a sealing member for connecting pipes including a body portion provided between an outer surface of a pipe and an inner surface of a connector into which the pipe is inserted and formed in a ring shape by extending along a circumferential direction; and wing portions formed protruding from the body portion and contacting an area in contact with the outer surface of the pipe to be disposed spacing apart from each other on both sides along the width direction of the body portion, wherein the pipe is deformable by an external force in a state in which the wing portions are formed in line contact with the outer surface of the pipe, respectively.

Abstract: A pipe connecting apparatus includes: a connector including a large diameter part having a hollow, into which a pipe is inserted, therein and in which at least any one of opposite ends of the hollow has a larger inner diameter such that an accommodation space is formed inside the one end of the hollow, and a pressing part continuously formed along a lengthwise direction of the large diameter part in a direction in which the pipe is inserted, having a smaller diameter than the large diameter part, and formed to surround an outer peripheral surface of the pipe; a ring-shaped sealing member provided in the accommodation space and surrounding the pipe on the outside of the pipe; and a grip member provided in the accommodation space to be adjacent to the sealing member.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A fitting apparatus for connecting pipes according to the present invention includes a fitting unit which includes a first body into which a first pipe is inserted and a second body which is connected to the first body to form a pipe insertion space therein together with the first body and into which a second pipe is inserted, wherein in the first body and the second body, a first recessed groove and a second recessed groove spaced apart inward from the first recessed groove are formed along an inner circumferential surface thereof, respectively, a compression member which is provided in the first recessed groove to compress and fix the first pipe or the second pipe, and a sealing member which is provided in the second recessed groove to maintain airtightness between the fitting unit and the first pipe or between the fitting unit and the second pipe.

Abstract: In at least one general aspect, a method can include forming a plurality of first active pillars and a plurality of edge pillars in a first semiconductor layer including an active region and a termination region, and forming a second semiconductor layer on the first semiconductor layer. The method can include forming a plurality of second active pillars and a plurality of preliminary charge balance layers in the second semiconductor layer, and annealing the first and second semiconductor layers such that the plurality of first active pillars and the plurality of second active pillars are connected by diffusing impurities implanted into the plurality of first active pillars and the plurality of second active pillars.

Abstract: A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction.

Abstract: A memory device includes a memory cell array, a comparator, and a virtual fail generator. The memory cell array includes memory cells. The comparator determines whether a fail of a first memory cell of the memory cell array corresponding to a first address is generated, by comparing data stored in the first memory cell with an expected value. The virtual fail generator generates a second address based on the first address provided from the comparator, in response to the comparator determining that the fail of the first memory cell is generated. The first memory cell and a second memory cell corresponding to the second address are repaired by spare memory cells in response to a repair command.

Abstract: Disclosed is a pipe connecting apparatus includes: a connector including a large diameter part having a hollow, into which a pipe is inserted, therein and in which at least any one of opposite ends of the hollow has a larger inner diameter such that an accommodation space is formed inside the one end of the hollow, and a pressing part continuously formed along a lengthwise direction of the large diameter part in a direction in which the pipe is inserted, having a smaller diameter than the large diameter part, and formed to surround an outer peripheral surface of the pipe; a ring-shaped sealing member provided in the accommodation space and surrounding the pipe on the outside of the pipe; and a grip member provided in the accommodation space to be adjacent to the sealing member.

Abstract: Provided is a pipe connecting sealing member including a projection part includes a body part that is provided between the outer surface of the pipe and the inner surface of the connector to which the pipe is inserted, and is formed to extend in a ring shape along a circumferential direction; and the projection part that is formed in a spiral shape forming an unlimited orbit and projects along the outer surface of the body part.

Abstract: A pipe connection device according to the present invention includes: a connection member including a projection in which an insertion space is formed in the projection and a pipe is inserted through one side and which is bent in a circumferential direction at the other side and a separation preventing unit which is spaced apart from the projection and protrudes in the circumferential direction; and a flange member coupled to the circumference of the connection member between the projection and the separation preventing unit so as to contact the projection and having a joining hole penetrated by a joining member.

Abstract: In at least one general aspect, a method can include forming a plurality of first active pillars and a plurality of edge pillars in a first semiconductor layer including an active region and a termination region, and forming a second semiconductor layer on the first semiconductor layer. The method can include forming a plurality of second active pillars and a plurality of preliminary charge balance layers in the second semiconductor layer, and annealing the first and second semiconductor layers such that the plurality of first active pillars and the plurality of second active pillars are connected by diffusing impurities implanted into the plurality of first active pillars and the plurality of second active pillars.

Abstract: A radio altimeter includes a voltage controlled oscillator outputting a radio frequency signal through a forward path in a direction from the voltage controlled oscillator to a radio frequency antenna, a path extending unit positioned in the forward path to receive the radio frequency signal to delay the radio frequency signal to generate a delayed radio frequency signal. The radio frequency antenna transmits the delayed radio frequency signal to ground and receives the delayed radio frequency signal reflected from the ground. The radio altimeter also includes a mixer that receives the reflected delayed radio frequency signal through a signal reception path from the radio frequency antenna and the radio frequency signal from the voltage controlled oscillator and mixes the radio frequency signal and the reflected delayed radio frequency signal to output a beat frequency signal which is used to calculate altitude with respect to the ground.

Abstract: A superjunction semiconductor device includes a first semiconductor layer doped with a first conductivity type; an active region formed on the first semiconductor layer, the active region including a drift layer; and a termination region disposed to surround the active region, the termination region including a lower edge region disposed on a side surface of the drift layer and an upper edge region disposed on the lower edge region, wherein the upper edge region includes a lower charge balance region disposed on the lower edge region, the lower charge balance region having a second conductivity type different from the first conductivity type, and an upper charge balance region disposed on the lower charge balance region, the upper charge balance region having the first conductivity type.

Abstract: An apparatus for processing a signal by means of electromagnetic waves according to one embodiment of the present invention can, when a radio frequency (RF) signal is radiated onto a medium through any one of a plurality of channels, simultaneously receive the radiated RF signals which have been reflected or scattered by the medium or have penetrated the medium through the plurality of channels other than the channel through which the RF signal has been radiated.