Patents by Inventor Kwang Woo SHIN

Kwang Woo SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NDIR GAS MEASURING DEVICE FOR DETECTING PRESENCE OF GAS OTHER THAN MEASUREMENT TARGET GAS
    Publication number: 20240118196
    Abstract: In the case of a gas in which several gases are mixed, a type and concentration of the gas may be incorrectly measured when measured using only an optical band-pass filter. The invention of the present application is directed to providing a technology in which a plurality of broadband band-pass filters having overlapping regions are provided to calculate a magnitude of absorption for each wavelength band for light passing through each broadband band-pass filter, thereby identifying the presence of a gas of interest and the presence of a gas other than the gas of interest.
    Type: Application
    Filed: September 8, 2023
    Publication date: April 11, 2024
    Inventors: Cheol Woo NAM, Byung Yul MOON, Eung Yul KIM, Jae Hwan KIM, Chun Ho SHIN, Kwang Hun PARK, Myun Gu CHOI, Chang Hwang CHOI, Yong Geol KIM, Jae Min JEON
  • PLASMA PROCESS UNIFORMITY BY WAFER BACK SIDE DOPING
    Publication number: 20240112904
    Abstract: Disclosed are systems and methods for improving front-side process uniformity by back-side doping. In some implementations, a highly conductive doped layer can be formed on the back side of a semiconductor wafer prior to certain process steps such as plasma-based processes. Presence of such a back-side doped layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based processes. Such reduction in thickness variations can result from reduced variation in radio-frequency (RF) coupling during the plasma-based processes.
    Type: Application
    Filed: September 20, 2023
    Publication date: April 4, 2024
    Inventors: Kezia Cheng, Kwang Jae Shin, Taecheol Shon, Yong Woo Jeon, Alan Sangone Chen
  • Magnetoelectric material and method of manufacturing the same
    Patent number: 9340902
    Abstract: The present invention provides a magnetoelectric material in which an electric property is capable of being controlled by a magnetic field or a magnetic property is capable of being controlled by an electric field, and a method of manufacturing the same. Particularly, the present invention provides a magnetoelectric material in which a distance between magnetic ions interacting with each other is controlled by using non-magnetic ions or alkaline earth metal ions, and a method of manufacturing the same.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: May 17, 2016
    Assignee: SNU R&DB FOUNDATION
    Inventors: Kee Hoon Kim, Sae Hwan Chun, Yi Sheng Chai, Kwang Woo Shin
  • MAGNETOELECTRIC MATERIAL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140138571
    Abstract: The present invention provides a magnetoelectric material in which an electric property is capable of being controlled by a magnetic field or a magnetic property is capable of being controlled by an electric field, and a method of manufacturing the same. Particularly, the present invention provides a magnetoelectric material in which a distance between magnetic ions interacting with each other is controlled by using non-magnetic ions or alkaline earth metal ions, and a method of manufacturing the same.
    Type: Application
    Filed: November 18, 2013
    Publication date: May 22, 2014
    Applicant: SNU R&DB FOUNDATION
    Inventors: Kee Hoon KIM, Sae Hwan CHUN, Yi Sheng CHAI, Kwang Woo SHIN