Patents by Inventor Kwang Wuk Park

Kwang Wuk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including TSV and method of manufacturing the same
    Patent number: 11705386
    Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: July 18, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Wuk Park, Sung Dong Cho, Eun Ji Kim, Hak Seung Lee, Dae Suk Lee, Dong Chan Lim, Sang Jun Park
  • SEMICONDUCTOR DEVICE INCLUDING TSV AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220173016
    Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.
    Type: Application
    Filed: February 17, 2022
    Publication date: June 2, 2022
    Inventors: Kwang Wuk PARK, Sung Dong CHO, Eun Ji KIM, Hak Seung LEE, Dae Suk LEE, Dong Chan LIM, Sang Jun PARK
  • Semiconductor device including TSV and method of manufacturing the same
    Patent number: 11289402
    Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: March 29, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang Wuk Park, Sung Dong Cho, Eun Ji Kim, Hak Seung Lee, Dae Suk Lee, Dong Chan Lim, Sang Jun Park
  • SEMICONDUCTOR DEVICE INCLUDING TSV AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200273780
    Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.
    Type: Application
    Filed: November 8, 2019
    Publication date: August 27, 2020
    Inventors: Kwang Wuk Park, Sung Dong Cho, Eun Ji Kim, Hak Seung Lee, Dae Suk Lee, Dong Chan Lim, Sang Jun Park