Patents by Inventor Kwang-Yong Choi
Kwang-Yong Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11944661Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.Type: GrantFiled: February 7, 2018Date of Patent: April 2, 2024Assignee: JEONNAM BIOINDUSTRY FOUNDATIONInventors: Chul Yung Choi, Dool Ri Oh, Yu Jin Kim, Eun Jin Choi, Hyun Mi Lee, Dong Hyuck Bae, Kyo Nyeo Oh, Myung-A Jung, Ji Ae Hong, Kwang Su Kim, Hu Won Kang, Jae Yong Kim, Sang O Pan, Sung Yoon Park, Rack Seon Seong
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Publication number: 20240074736Abstract: An ultrasonic image providing method of the present disclosure includes: receiving ultrasonic images; measuring a plurality of similarities for a plurality of measurement items for at least one of the ultrasonic images; comparing the plurality of similarities with corresponding default thresholds, respectively; when none of the plurality of similarities is greater than the corresponding default threshold, selecting a measurement item maintaining the greatest similarity among the plurality of similarities for a reference time; and providing an ultrasonic image for the selected measurement item as an ultrasonic image.Type: ApplicationFiled: August 19, 2021Publication date: March 7, 2024Applicant: SAMSUNG MEDISON CO., LTD.Inventors: Ja Young Kwon, Ye Jin Park, Jin Yong Lee, Sung Wook Park, Jin Ki Park, Dong Eun Lee, Ji Hun Lee, Kwang Yeon Choi
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Patent number: 11925084Abstract: A display panel can include a substrate, a light-emitting element including an emission region on the substrate, a reference voltage line adjacent to the light-emitting element, and a branch line connected to the reference voltage line to apply a reference voltage to light-emitting element. The light-emitting element can emit light on the emission region in a direction of the substrate. Further, the branch line can include a semiconductor layer, and the semiconductor layer of the branch line can overlap the emission region.Type: GrantFiled: December 16, 2022Date of Patent: March 5, 2024Assignee: LG DISPLAY CO., LTD.Inventors: Dong Yoon Lee, Kwang Yong Choi, Seong Hwan Hwang, Byeong Uk Gang, Hye Min Park
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Publication number: 20230120823Abstract: A display panel can include a substrate, a light-emitting element including an emission region on the substrate, a reference voltage line adjacent to the light-emitting element, and a branch line connected to the reference voltage line to apply a reference voltage to light-emitting element. The light-emitting element can emit light on the emission region in a direction of the substrate. Further, the branch line can include a semiconductor layer, and the semiconductor layer of the branch line can overlap the emission region.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Applicant: LG Display Co., Ltd.Inventors: Dong Yoon LEE, Kwang Yong CHOI, Seong Hwan HWANG, Byeong Uk GANG, Hye Min PARK
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Patent number: 11557642Abstract: The present disclosure relates to a display panel and a repair method thereof. The display panel includes a plurality of pixel circuits in which an emission region, through which light from a light-emitting element is emitted, is defined, a power line configured to apply a pixel driving voltage to the pixel circuits, a reference voltage line to which a reference voltage lower than the pixel driving voltage is applied, and a branch line connected to the reference voltage line to apply the reference voltage to one or more of the pixel circuits. At least a portion of the branch line includes a partially metalized semiconductor layer.Type: GrantFiled: December 7, 2020Date of Patent: January 17, 2023Assignee: LG DISPLAY CO., LTD.Inventors: Dong Yoon Lee, Kwang Yong Choi, Seong Hwan Hwang, Byeong Uk Gang, Hye Min Park
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Publication number: 20220190081Abstract: Discussed is a display device including a gate electrode, a gate insulating film disposed on the gate electrode, a semiconductor layer disposed on the gate insulating film, an insulating layer disposed on the semiconductor layer, a first electrode disposed on the insulating layer, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer.Type: ApplicationFiled: December 16, 2021Publication date: June 16, 2022Applicant: LG Display Co., Ltd.Inventors: Kwang Yong CHOI, In Hyo HAN, Dong Yoon LEE, Hyun Dong KIM
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Publication number: 20210202659Abstract: The present disclosure relates to a display panel and a repair method thereof. The display panel includes a plurality of pixel circuits in which an emission region, through which light from a light-emitting element is emitted, is defined, a power line configured to apply a pixel driving voltage to the pixel circuits, a reference voltage line to which a reference voltage lower than the pixel driving voltage is applied, and a branch line connected to the reference voltage line to apply the reference voltage to one or more of the pixel circuits. At least a portion of the branch line includes a partially metalized semiconductor layer.Type: ApplicationFiled: December 7, 2020Publication date: July 1, 2021Applicant: LG Display Co., Ltd.Inventors: Dong Yoon LEE, Kwang Yong CHOI, Seong Hwan HWANG, Byeong Uk GANG, Hye Min PARK
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Patent number: 11018279Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the pluralityType: GrantFiled: June 18, 2019Date of Patent: May 25, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Yong Gyeong Lee, Min Sung Kim, Su Ik Park, Youn Joon Sung, Kwang Yong Choi
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Patent number: 10998466Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.Type: GrantFiled: March 8, 2017Date of Patent: May 4, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Kwang Yong Choi, Min Sung Kim, Su Ik Park, Youn Joon Sung, Yong Gyeong Lee
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Patent number: 10794078Abstract: A damper for reinforcing earthquake resistance according to the present invention includes a first supporting part mounted in a building structure, a second supporting part mounted on a support structure movably disposed to be separated from the building structure, and disposed to face the first supporting part, and a damper part connecting the first supporting part with the second supporting part and absorbing energy generated by an earthquake.Type: GrantFiled: August 22, 2018Date of Patent: October 6, 2020Assignee: KOREA ELECTRIC POWER CORPORATIONInventors: Kyung Jin Lee, Sang Hoon Oh, Kwang Yong Choi, Kyung Won Hahm
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Patent number: 10790413Abstract: One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.Type: GrantFiled: December 28, 2016Date of Patent: September 29, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Youn Joon Sung, Yong Gyeong Lee, Kwang Yong Choi
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Patent number: 10763394Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.Type: GrantFiled: July 29, 2016Date of Patent: September 1, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Yong Gyeong Lee, Min Sung Kim, Su Ik Park, Youn Joon Sung, Kwang Yong Choi
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Publication number: 20200181931Abstract: A damper for reinforcing earthquake resistance according to the present invention includes a first supporting part mounted in a building structure, a second supporting part mounted on a support structure movably disposed to be separated from the building structure, and disposed to face the first supporting part, and a damper part connecting the first supporting part with the second supporting part and absorbing energy generated by an earthquake.Type: ApplicationFiled: August 22, 2018Publication date: June 11, 2020Applicant: KOREA ELECTRIC POWER CORPORATIONInventors: Kyung Jin LEE, Sang Hoon OH, Kwang Yong CHOI, Kyung Won HAHM
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Patent number: 10490702Abstract: Embodiments disclose a light-emitting device including a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess and a second recess passing through the second conductive semiconductor layer and the active layer and disposed up to a partial region of the first conductive semiconductor layer, a connection electrode disposed inside the first recess and electrically connected to the first conductive semiconductor layer, a reflective layer disposed inside the second recess, and an insulation layer configured to electrically insulate the reflective layer and the light-emitting structure, and a light-emitting device package including the same.Type: GrantFiled: August 25, 2016Date of Patent: November 26, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Su Ik Park, Min Sung Kim, Youn Joon Sung, Yong Gyeong Lee, Kwang Yong Choi
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Publication number: 20190305184Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the pluralityType: ApplicationFiled: June 18, 2019Publication date: October 3, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Yong Gyeong LEE, Min Sung KIM, Su Ik PARK, Youn Joon SUNG, Kwang Yong CHOI
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Patent number: 10263154Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductoType: GrantFiled: August 25, 2016Date of Patent: April 16, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Su Ik Park, Min Sung Kim, Youn Joon Sung, Yong Gyeong Lee, Kwang Yong Choi
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Patent number: 10256368Abstract: Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.Type: GrantFiled: March 20, 2013Date of Patent: April 9, 2019Assignee: SK Siltron Co., Ltd.Inventors: Jung-Hyun Eum, Kwang-Yong Choi, Jae-Ho Song, Dong-Kun Lee, Kye-Jin Lee, Young-Jae Choi
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Publication number: 20190088822Abstract: An embodiment of the present invention relates to a light emitting device capable of enhancing ohmic characteristics of a semiconductor layer and an electrode and simultaneously improving driving voltage, comprising: a support substrate; a light emitting structure which is disposed on the support substrate and comprises a first semiconductor layer, a second semiconductor layer and an active layer disposed between the first semiconductor layer and the second semiconductor layer; at least one groove which exposes the first semiconductor layer through the second semiconductor layer and the active layer; a first electrode which is disposed between the light emitting structure and the support substrate and electrically connected to the exposed first semiconductor layer; a second electrode which comprises ITO and contacts the second semiconductor layer; and a capping layer which is electrically connected, between the first electrode and the light emitting structure, to the second electrode, wherein the capping layeType: ApplicationFiled: March 8, 2017Publication date: March 21, 2019Inventors: Kwang Yong CHOI, Min Sung KIM, Su Ik PARK, Youn Joon SUNG, Yong Gyeong LEE
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Patent number: 10236417Abstract: An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.Type: GrantFiled: March 31, 2016Date of Patent: March 19, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Woo Sik Lim, Min Sung Kim, Eun Woo Ro, Su Ik Park, Youn Joon Sung, Kwang Yong Choi
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Publication number: 20190013439Abstract: One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.Type: ApplicationFiled: December 28, 2016Publication date: January 10, 2019Inventors: Youn Joon SUNG, Yong Gyeong LEE, Kwang Yong CHOI