Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: A nanostructure controlling a single photon which controls both of the position and the polarization direction of a single photon is proposed. An embodiment is a nanostructure controlling a single photon which includes a substrate and at least one insulating film units having a first insulating film and a second insulating film spaced apart from each other on the substrate and in which the portion between the first insulating film and the second insulating film is defined as a first nanogap.

Abstract: Disclosed is a cooling system for a vehicle, in which coolant coolant, a blend of an antifreezing solution and water flowed into a radiator generates turbulent flow when a vehicle is in a state of a critical driving mode of a vehicle for example, a hill-climbing mode, thereby enhancing heat radiating performance and reducing pressure drop amount at the same time.