Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

Abstract: A method of fabricating a semiconductor device includes forming a dummy gate on a substrate, forming a dummy gate mask on the dummy gate, forming a gate spacer on the substrate, the gate spacer covering at least one sidewall surface of the dummy gate and the dummy gate mask, forming a recess on at least one side of the dummy gate by etching the substrate, and forming an epitaxial layer in the recess using an epitaxial growth process. The forming of the dummy gate mask includes forming an oxide layer and a dummy gate mask layer on the dummy gate.

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

Abstract: A method of fabricating a semiconductor device includes forming a dummy gate on a substrate, forming a dummy gate mask on the dummy gate, forming a gate spacer on the substrate, the gate spacer covering at least one sidewall surface of the dummy gate and the dummy gate mask, forming a recess on at least one side of the dummy gate by etching the substrate, and forming an epitaxial layer in the recess using an epitaxial growth process. The forming of the dummy gate mask includes forming an oxide layer and a dummy gate mask layer on the dummy gate.

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.

Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.