Abstract: A positive electrode including a positive electrode active material layer disposed on at least one surface of a positive electrode current collector, the positive electrode active material layer including a lithium transition metal phosphate, a fluorine-based binder, and a conductive material. The lithium transition metal phosphate includes a carbon coating layer formed on a surface thereof, and a ratio (B/A) of a total weight (B) of the fluorine-based binder to a total weight (A) of carbon of the conductive material and the lithium transition metal phosphate in the positive electrode active material layer is 0.7 to 1.7.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A display device includes a light emitting sub-pixel disposed in a display area, a light receiving pixel disposed in one of the display area or a non-display area, and a touch sensing layer including a sensing conductive layer overlapping with the light receiving pixel.

Abstract: An apparatus for predicting performance of a wheel in a vehicle: includes a learning device that generates a latent space for a plurality of two-dimensional (2D) wheel images based on a convolutional autoencoder (CAE), extracts a predetermined number of the plurality of 2D wheel images from the latent space, and learns a dataset having the plurality of 2D wheel images and performance values corresponding to the plurality of 2D wheel images; and a controller that predicts performance for the plurality of 2D wheel images based on a performance prediction model obtained by the learning device.

Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: A display device includes first emission areas, second emission areas, and third emission areas for respectively emitting colors of light, first pixel electrodes, second pixel electrodes, and third pixel electrodes overlapping the first emission areas, the second emission areas, and the third emission areas, respectively, first data lines respectively connected to the first pixel electrodes, and overlapping some of the first emission areas, second data lines respectively electrically connected to the second pixel electrodes, overlapping some others of the first emission areas, and being spaced apart from the first data lines, and a demultiplexer configured to divide and output corresponding portions of an input, which is received from one fan-out line, to the first data lines and the second data lines.

Abstract: It is introduced that a device of manufacturing lithium sulfate comprising: a reaction body in which a reaction of lithium phosphate and sulfuric acid is performed, the reaction body being divided into an upper space and a lower space; a pressurizer for applying pressure to the inside of the reaction body; a stirrer disposed in the upper space for stirring the lithium phosphate and sulfuric acid to produce a mixture containing lithium sulfate and phosphoric acid; and a filter disposed inside the reaction body and separating the filtrate containing the phosphoric acid into the lower space by filtering the mixture.

Abstract: A display device includes a substrate including a display area and a non-display area disposed near the display area, a plurality of pixels disposed in the display area, a plurality of signal lines disposed on the substrate and connected to the pixels, and a pad portion disposed in the non-display area and including a plurality of pads. The signal lines include a first crack detecting line connected to a first test voltage pad and a first pad at a first node, connected to a second pad at a second node, and extending around the non-display area between the first node and the second node, as well as a first data line including a first end connected to a first transistor connected to the first crack detecting line at the second node, and a second end connected to corresponding pixels from among the plurality of pixels.

Abstract: An ultrasonic image providing method of the present disclosure includes: receiving ultrasonic images; measuring a plurality of similarities for a plurality of measurement items for at least one of the ultrasonic images; comparing the plurality of similarities with corresponding default thresholds, respectively; when none of the plurality of similarities is greater than the corresponding default threshold, selecting a measurement item maintaining the greatest similarity among the plurality of similarities for a reference time; and providing an ultrasonic image for the selected measurement item as an ultrasonic image.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A display device includes: a display panel including a light emitting element and a photosensitive element; an input sensor comprising a sensing electrode on the display panel; and an anti-reflection layer on the input sensor. The anti-reflection layer includes: a light shielding pattern having a first opening corresponding to the light emitting element and a second opening corresponding to the photosensitive element. The sensing electrode includes a plurality of line portions, the plurality of line portions includes a first line portion overlapping the light shielding pattern and arranged between the first opening and the second opening on a plane. S distance between the first line portion and an edge of the second opening is less than a distance between the first line portion and an edge of the first opening.

Abstract: Provided are a method for preparing a polyetherketoneketone and a polyetherketoneketone prepared thereby, wherein, at the time of a polymerization reaction, nitrogen gas is blown into a liquid reaction medium while stirring, thereby quickly removing hydrochloric acid, which is a by-product generated during the reaction, and preventing aggregation of resin particles, thus suppressing the generation of scales.

Abstract: Provided are a composite formulation including sitagliptin and dapagliflozin and a method of preparing the same.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.