Abstract: A display device according to an exemplary embodiment of the present disclosure includes a light emitting diode and a pixel driving circuit which drives the light emitting diode, the pixel driving circuit includes a driving transistor which applies a driving current to the light emitting diode, a first transistor which applies a first reference voltage to a gate electrode of the driving transistor, a second transistor which applies a data voltage to the gate electrode of the driving transistor, a third transistor which applies a second reference voltage to a source electrode of the driving transistor, and a storage capacitor connected to the gate electrode and the source electrode of the driving transistor. According to the present disclosure, the threshold voltage Vth and the mobility of the driving transistors are internally compensated to improve an image quality.

Abstract: Disclosed are a display device and a method for driving a pixel of the display device. The device and method is capable of securing a time to sense a threshold voltage of a driving transistor and of compensating for the threshold voltage during operation of the pixel. Each of a plurality of pixels has a 5T1C structure including first to fourth transistors and a driving transistor. The first to fourth transistors are configured to apply driving signals through first to fourth scan lines, respectively. Thus, even without increasing the number of driving signals applied to each pixel, a long time for sensing a threshold voltage of each pixel can be secured.

Abstract: The present invention relates to a display apparatus that allows a compensated data voltage to be supplied to each pixel by compensating for the data voltage so as to prevent burn-in from occurring in a display panel, a method for compensating a data signal thereof, and a method for generating a deep learning-based compensation model. To implement same, the present invention provides the display apparatus comprising a timing controller having mounted therein the compensation model generated by learning, in a deep learning method, the temperature, time, average brightness, and data voltage for each pixel. Accordingly, the present invention has an effect of preventing burn-in from occurring in each pixel by supplying each pixel with the compensated data voltage generated via the compensation model.

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and a display device. Since a wavy structure is formed through heat treatment in a structure in which a first buffer layer made of an organic material, a second buffer layer made of a metal oxide and a third buffer layer made of an inorganic material are stacked, it is possible to provide a display device including an array substrate which has stretchable characteristics through the wavy structure while preventing a crack from occurring in the third buffer layer and preventing characteristics of thin film transistors disposed on the third buffer layer from degrading.

Abstract: The present invention relates to a display apparatus that allows a compensated data voltage to be supplied to each pixel by compensating for the data voltage so as to prevent burn-in from occurring in a display panel, a method for compensating a data signal thereof, and a method for generating a deep learning-based compensation model. To implement same, the present invention provides the display apparatus comprising a timing controller having mounted therein the compensation model generated by learning, in a deep learning method, the temperature, time, average brightness, and data voltage for each pixel. Accordingly, the present invention has an effect of preventing burn-in from occurring in each pixel by supplying each pixel with the compensated data voltage generated via the compensation model.

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

Abstract: A thin-film transistor includes a gate electrode, and an active layer insulated from the gate electrode by a gate insulating layer, and the active layer includes a quasi-superlattice structure with a first oxide semiconductor material and a second oxide semiconductor material having a larger bandgap than the first oxide semiconductor material alternately stacked at least twice. A display apparatus includes a thin-film transistor including an active layer of a quasi-superlattice structure for each pixel.

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

Abstract: The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

Abstract: The present disclosure relates to an anisotropic conductive film capable of electrode bonding even at a low temperature and maintaining excellent conductivity and flexibility, a manufacturing method thereof, and a display device using the same. The anisotropic conductive film contains conductive microcapsules including a liquid metal in a binder layer.

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

Abstract: A thin film transistor is disclosed, which includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a hydrogen supply layer on the gate insulating film; a source electrode connected with the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer includes a channel portion overlapped with the gate electrode and a connecting portion not overlapped with the gate electrode, a hydrogen concentration of the connecting portion is higher than that of the channel portion, and the gate insulating film includes a first area overlapped with the gate electrode and a second area not overlapped with the gate electrode, and a hydrogen concentration of the second area is higher that of the first area.

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

Abstract: A thin film transistor is disclosed, which includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a hydrogen supply layer on the gate insulating film; a source electrode connected with the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer includes a channel portion overlapped with the gate electrode and a connecting portion not overlapped with the gate electrode, a hydrogen concentration of the connecting portion is higher than that of the channel portion, and the gate insulating film includes a first area overlapped with the gate electrode and a second area not overlapped with the gate electrode, and a hydrogen concentration of the second area is higher that of the first area.

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.