Abstract: The inventive concept provides a teaching method for teaching a transfer position of a transfer robot. The teaching method includes: searching for an object on which a target object to be transferred by the transfer robot is placed, based on a 3D position information acquired by a first sensor; and acquiring coordinates of a second direction and coordinates of a third direction of the object based on a data acquired from a second sensor which is a different type from the first sensor.

Abstract: A method for manufacturing a display device includes a stage; a first guide unit positioned on one side of the stage in a first direction and extending in a second direction crossing the first direction; and a first peeling unit disposed on the first guide unit, wherein the first peeling unit includes a first moving part configured to move along the first guide unit, a first rotating part coupled to the other side of the first moving part in the first direction and configured to rotate about an axis extending in the first direction, and a first gripping part coupled to the other side of the first rotating part in the first direction and disposed to overlap the stage.

Abstract: An apparatus for predicting performance of a wheel in a vehicle: includes a learning device that generates a latent space for a plurality of two-dimensional (2D) wheel images based on a convolutional autoencoder (CAE), extracts a predetermined number of the plurality of 2D wheel images from the latent space, and learns a dataset having the plurality of 2D wheel images and performance values corresponding to the plurality of 2D wheel images; and a controller that predicts performance for the plurality of 2D wheel images based on a performance prediction model obtained by the learning device.

Abstract: In the case of a gas in which several gases are mixed, a type and concentration of the gas may be incorrectly measured when measured using only an optical band-pass filter. The invention of the present application is directed to providing a technology in which a plurality of broadband band-pass filters having overlapping regions are provided to calculate a magnitude of absorption for each wavelength band for light passing through each broadband band-pass filter, thereby identifying the presence of a gas of interest and the presence of a gas other than the gas of interest.

Abstract: The present disclosure provides a method for preparing a vinyl chloride-based polymer, the method including a step of injecting an ionizable normal salt and polymerizing a vinyl chloride monomer in the presence of one or more emulsifiers and a polymerization initiator, wherein the ionizable normal salt includes a carbonate metal salt or a sulfite metal salt, and the ionizable normal salt is continuously injected in an amount of 70 to 1200 ppm based on the total weight of the vinyl chloride monomer when a polymerization conversion rate is in a range of 0% to 20%. The method capable of preparing a vinyl chloride-based polymer suitable as an eco-friendly material, while not affecting the rate of polymerization reaction and decreasing the generation amount of total volatile organic compounds by controlling the injection time, injection amount and kind of the ionizable normal salt, is provided.

Abstract: The present disclosure relates to a composition for preparing a vinyl chloride-based polymer and a method of preparing a vinyl chloride-based polymer using the same, and provides the composition giving excellent productivity for preparing a vinyl chloride-based polymer includes while maintaining excellent foaming and viscosity properties of a plastisol including the prepared vinyl chloride-based polymer, by including a pH regulator composed of a carbonate-based metal salt, and a transition metal catalyst in the composition, and controlling an amount of the transition metal catalyst, and controlling an amount of a reducing agent such that a trace amount or none of the reducing agent is included, and the method of preparing a vinyl chloride-based polymer using the same.

Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.

Abstract: A volatile memory device and a nonvolatile memory device are provided. Provided is a plurality of gate electrodes and a plurality of insulating patterns alternately stacked on top of each other in a first direction, an information storage film formed along a sidewall of a trench, wherein the trench extends through the plurality of gate electrodes and the insulating patterns in the first direction, and a semiconductor pattern formed on the information storage film, wherein the semiconductor pattern is made of polycrystalline silicon composed of a first monocrystalline silicon and a second monocrystalline silicon, wherein a metal silicide is present in a grain boundary between the first monocrystalline silicon and the second monocrystalline silicon, wherein the metal silicide is absent in each of the first monocrystalline silicon and the second monocrystalline silicon except for the grain boundary therebetween.

Abstract: A display panel can include a substrate, a light-emitting element including an emission region on the substrate, a reference voltage line adjacent to the light-emitting element, and a branch line connected to the reference voltage line to apply a reference voltage to light-emitting element. The light-emitting element can emit light on the emission region in a direction of the substrate. Further, the branch line can include a semiconductor layer, and the semiconductor layer of the branch line can overlap the emission region.

Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.

Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: A gas sensing system includes a driving circuit chip, and a gas sensor, a temperature sensor, and a humidity sensor, which are located on the driving circuit chip. The gas sensing system compensates a gas sensing result based on at least one of a temperature sensing result and a humidity sensing result and generates a gas sensing signal. The gas sensor includes a first resonator and a first sensing film being configured to sense a first gas and located on the first resonator to be exposed to the outside. The temperature sensor includes a second resonator and an encapsulation layer located above the second resonator not to expose the second resonator to the outside, and the humidity sensor includes a third resonator.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: A gas sensor including a gas sensing device having a resonant frequency that varies with adsorbed chemicals, a frequency detector configured to detect the resonant frequency of the gas sensing device, a calibrator configured to generate current calibration data based on the resonant frequency of the gas sensing device which has been heated to a calibration temperature in a calibration mode, and a compensator configured to adjust an output value of the frequency detector based on the current calibration data in a sensing mode may be provided.

Abstract: In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.

Abstract: A gas sensing system includes a driving circuit chip, and a gas sensor, a temperature sensor, and a humidity sensor, which are located on the driving circuit chip. The gas sensing system compensates a gas sensing result based on at least one of a temperature sensing result and a humidity sensing result and generates a gas sensing signal. The gas sensor includes a first resonator and a first sensing film being configured to sense a first gas and located on the first resonator to be exposed to the outside. The temperature sensor includes a second resonator and an encapsulation layer located above the second resonator not to expose the second resonator to the outside, and the humidity sensor includes a third resonator.

Abstract: A resonator sensor device includes a lower electrode located on a substrate, a piezoelectric layer located on the lower electrode, an upper electrode located on the piezoelectric layer, an upper passivation layer located on the upper electrode, the upper passivation layer including a hydrophobic material, and a gas sensing layer located on the upper passivation layer.

Abstract: A gas sensor including a gas sensing device having a resonant frequency that varies with adsorbed chemicals, a frequency detector configured to detect the resonant frequency of the gas sensing device, a calibrator configured to generate current calibration data based on the resonant frequency of the gas sensing device which has been heated to a calibration temperature in a calibration mode, and a compensator configured to adjust an output value of the frequency detector based on the current calibration data in a sensing mode may be provided.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.