Abstract: A volatile memory device and a nonvolatile memory device are provided. Provided is a plurality of gate electrodes and a plurality of insulating patterns alternately stacked on top of each other in a first direction, an information storage film formed along a sidewall of a trench, wherein the trench extends through the plurality of gate electrodes and the insulating patterns in the first direction, and a semiconductor pattern formed on the information storage film, wherein the semiconductor pattern is made of polycrystalline silicon composed of a first monocrystalline silicon and a second monocrystalline silicon, wherein a metal silicide is present in a grain boundary between the first monocrystalline silicon and the second monocrystalline silicon, wherein the metal silicide is absent in each of the first monocrystalline silicon and the second monocrystalline silicon except for the grain boundary therebetween.

Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.

Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: A gas sensing system includes a driving circuit chip, and a gas sensor, a temperature sensor, and a humidity sensor, which are located on the driving circuit chip. The gas sensing system compensates a gas sensing result based on at least one of a temperature sensing result and a humidity sensing result and generates a gas sensing signal. The gas sensor includes a first resonator and a first sensing film being configured to sense a first gas and located on the first resonator to be exposed to the outside. The temperature sensor includes a second resonator and an encapsulation layer located above the second resonator not to expose the second resonator to the outside, and the humidity sensor includes a third resonator.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: A gas sensor including a gas sensing device having a resonant frequency that varies with adsorbed chemicals, a frequency detector configured to detect the resonant frequency of the gas sensing device, a calibrator configured to generate current calibration data based on the resonant frequency of the gas sensing device which has been heated to a calibration temperature in a calibration mode, and a compensator configured to adjust an output value of the frequency detector based on the current calibration data in a sensing mode may be provided.

Abstract: In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.

Abstract: A gas sensing system includes a driving circuit chip, and a gas sensor, a temperature sensor, and a humidity sensor, which are located on the driving circuit chip. The gas sensing system compensates a gas sensing result based on at least one of a temperature sensing result and a humidity sensing result and generates a gas sensing signal. The gas sensor includes a first resonator and a first sensing film being configured to sense a first gas and located on the first resonator to be exposed to the outside. The temperature sensor includes a second resonator and an encapsulation layer located above the second resonator not to expose the second resonator to the outside, and the humidity sensor includes a third resonator.

Abstract: A resonator sensor device includes a lower electrode located on a substrate, a piezoelectric layer located on the lower electrode, an upper electrode located on the piezoelectric layer, an upper passivation layer located on the upper electrode, the upper passivation layer including a hydrophobic material, and a gas sensing layer located on the upper passivation layer.

Abstract: A gas sensor including a gas sensing device having a resonant frequency that varies with adsorbed chemicals, a frequency detector configured to detect the resonant frequency of the gas sensing device, a calibrator configured to generate current calibration data based on the resonant frequency of the gas sensing device which has been heated to a calibration temperature in a calibration mode, and a compensator configured to adjust an output value of the frequency detector based on the current calibration data in a sensing mode may be provided.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: A swelling tape is disclosed comprising a polyurethane film and a method for manufacturing the same. The swelling tape comprises: a base layer including a polyurethane film that is composed of a chain of monomers joined by urethane links as a result of a reaction between a liquid polyol and a crosslinker; and an adhesive layer formed on a first surface of the base layer in a direction horizontal to a lengthwise direction of the base layer. When made with the liquid polyol and the crosslinker, a resulting polyurethane film exhibits appearance and performance similar to polyurethane film prepared through extrusion. The resulting polyurethane film has a uniform thickness and the advantage of being produced at a low cost.

Abstract: The present invention relates to a pharmaceutical composition comprising a compound of formula (1), (2) or (3) as defined in the specification for the prevention or treatment of diseases associated with oxidative stress, mitochondria dysfunction, hypoxic injury, necrosis and/or ischemic reperfusion injury, and a cosmetic composition comprising an indole compound having an antioxidant effect.

Abstract: A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided.

Abstract: A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

Abstract: A semiconductor device includes: a substrate including a channel region; a gate dielectric a tunneling layer, a charge storage layer, and a blocking layer sequentially disposed on the channel region; and a gate electrode disposed on the gate dielectric, wherein the tunneling layer has variations in nitrogen concentrations in a direction perpendicular to the channel region, and has a maximum nitrogen concentration in a position shifted from a center of the tunneling layer toward the charge storage layer.

Abstract: A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

Abstract: The present disclosure provides a headliner for a vehicle. The headliner includes a foam; a hot melt film positioned on a surface of the foam; a reinforcement sheet positioned on the hot melt film; and a heat shielding layer coated with a thermal barrier material on the reinforcement sheet. In particular, the heat shielding layer includes a carbon nanotube.

Abstract: A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.