Patents by Inventor Kwangmo LIM

Kwangmo LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250125277
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Application
    Filed: December 23, 2024
    Publication date: April 17, 2025
    Inventors: Srinivas V. PIETAMBARAM, Sri Ranga Sai BOYAPATI, Robert A. MAY, Kristof DARMAWIKARTA, Javier SOTO GONZALEZ, Kwangmo LIM
  • Patent number: 12218071
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Grant
    Filed: June 12, 2023
    Date of Patent: February 4, 2025
    Assignee: Intel Corporation
    Inventors: Srinivas V. Pietambaram, Sri Ranga Sai Boyapati, Robert A. May, Kristof Darmawikarta, Javier Soto Gonzalez, Kwangmo Lim
  • Publication number: 20230326866
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Application
    Filed: June 12, 2023
    Publication date: October 12, 2023
    Inventors: Srinivas V. PIETAMBARAM, Sri Ranga Sai BOYAPATI, Robert A. MAY, Kristof DARMAWIKARTA, Javier SOTO GONZALEZ, Kwangmo LIM
  • Patent number: 11735531
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Grant
    Filed: July 13, 2021
    Date of Patent: August 22, 2023
    Assignee: Intel Corporation
    Inventors: Srinivas V. Pietambaram, Sri Ranga Sai Boyapati, Robert A. May, Kristof Darmawikarta, Javier Soto Gonzalez, Kwangmo Lim
  • Publication number: 20210343653
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Application
    Filed: July 13, 2021
    Publication date: November 4, 2021
    Inventors: Srinivas V. PIETAMBARAM, Sri Ranga Sai BOYAPATI, Robert A. MAY, Kristof DARMAWIKARTA, Javier SOTO GONZALEZ, Kwangmo LIM
  • Patent number: 11101222
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: August 24, 2021
    Assignee: Intel Corporation
    Inventors: Srinivas V. Pietambaram, Sri Ranga Sai Boyapati, Robert A. May, Kristof Darmawikarta, Javier Soto Gonzalez, Kwangmo Lim
  • Publication number: 20190189563
    Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
    Type: Application
    Filed: September 29, 2016
    Publication date: June 20, 2019
    Inventors: Srinivas V. PIETAMBARAM, Sri Ranga Sai BOYAPATI, Robert A. MAY, Kristof DARMAWIKARTA, Javier SOTO GONZALEZ, Kwangmo LIM