Abstract: A method of manufacturing a semiconductor device includes forming an interlayer insulating layer on a substrate, forming a first mask layer on the interlayer insulating layer, forming a second mask layer and a first spacer on the first mask layer, forming a photoresist pattern on the second mask layer, forming a second mask pattern by patterning the second mask layer through a first etching process, forming a first mask pattern by patterning the first mask layer through a second etching process, forming a trench by etching a portion of the interlayer insulating layer through a third etching process, and forming an interconnection pattern within the trench. A width of the first mask pattern after the second etching process is less than a width of the photoresist pattern.

Abstract: The present disclosure relates to austenitic stainless steel with excellent electrical conductivity in which metal copper is formed in a non-conductive passivation film formed on the surface of stainless steel, and a method of manufacturing the same. The austenitic stainless steel with excellent electrical conductivity according to an embodiment of present disclosure includes: a stainless steel base material comprising, in percent (%) by weight of the entire composition, C: 0.1% or less, Si: 0.1 to 1.0% or less, Mn: 0.1 to 2.0% or less, Cr: 15 to 24% or less, Ni: 6 to 12% or less, Cu: 0.5 to 3% or less, the remainder of iron (Fe) and other inevitable impurities; and a passivation film formed on the stainless steel base material, and the passivation film has a thickness of more than 0 and less than or equal to 5 nm, the Cu weight % content in the thickness region between 2 to 3 nm from the surface of the passivation film is 1.5 or more compared to the Cu weight % content of the stainless steel base material.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

Abstract: Provided is a plasma processing apparatus for controlling a distribution of plasma at an edge region of a chamber during a plasma process, thereby reliably performing the plasma process on a semiconductor substrate. The plasma processing apparatus includes a chamber including an outer wall defining a reaction space and a window covering an upper portion of the outer wall; a coil antenna positioned above the window and including at least two coils; and an electrostatic chuck (ESC) positioned in a lower portion of the chamber, wherein an electrode is located inside the ESC, wherein the electrode includes a first electrode for chucking and at least one second electrode, the at least one second electrode provided at an edge of the inside of the ESC so as to have a tilt with respect to the top surface of the ESC.

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

Abstract: A method of processing a substrate including loading the substrate into a plasma-processing apparatus. The plasma-processing apparatus includes a focus ring. The substrate is processed in the plasma-processing apparatus using plasma. The substrate is unloaded from the plasma-processing apparatus. A layer is formed on the focus ring. The layer is formed by an in-situ process in the plasma-processing apparatus.

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

Abstract: Disclosed are a dry etching apparatus and a method of etching a substrate using the same. The apparatus includes a base at a lower portion of process chamber in which a dry etching process is performed, a substrate holder arranged on the base and holding a substrate on which a plurality of pattern structures is formed by the etching process, a focus ring enclosing the substrate holder and uniformly focusing an etching plasma to a sheath area over the substrate, a driver driving the focus ring in a vertical direction perpendicular to the base and a position controller controlling a vertical position of the focus ring by selectively driving the driver in accordance with inspection results of the pattern structures. Accordingly, the gap distance between the substrate and the focus ring is automatically controlled to thereby increase the uniformity of the etching plasma over the substrate.