Abstract: A process of forming a patterned silicide layer overlying a processed semiconductor substrate, the substrate having insulator regions and insulator-free regions on an exposed surface thereof, comprising the steps of:co-depositing silicon and a refractory metal on the exposed surface of the substrate to form a metal rich silicide thereon;annealing the metal rich silicide such that it reacts with the underlying insulator-free regions to form a reacted silicide without reacting with the underlying insulator regions; andexposing the substrate to a wet etchant which removes the unreacted portions of the metal rich silicide without removing the reacted silicide.