Abstract: An air conditioning system is provided with an integrated heat exchanger. The air conditioning system generates heating air or cooling air through the integrated heat exchanger that adjusts the temperature of conditioning air by circulating coolant, thus securing cooling and heating efficiency. The air conditioning system adjusts temperature by the coolant circulated in the integrated heat exchanger such that a temperature adjustment door for adjusting the temperature of the conditioning air is eliminated, the number of components is decreased, and the size of an overall package is reduced.

Abstract: A method of calculating a collision risk of a ship according to an embodiment of the present disclosure may include: calculating an available velocity area based on maneuvering performance of a host ship; calculating a velocity obstacle area where there is a possibility of collision between an object and the host ship; and calculating a collision risk based on at least one of the available velocity area, the velocity obstacle area, and a preset weight.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.

Abstract: An embodiment vehicle hinge driving apparatus for driving a vehicle hinge mounted between a door component and a vehicle body includes an actuator, a housing connected to the actuator, an output shaft having an axis aligned with an axis of the housing, and a transmission mechanism configured to vary a torque generated by the actuator and to transmit the torque to the output shaft.

Abstract: Disclosed are: a reinforced composite membrane-type polymer electrolyte membrane which can prevent the loss of an ion conductor even when the ion conductor is chemically deteriorated due to long-term use, and thus has remarkably enhanced mechanical and chemical durability; a method for manufacturing same; and an electrochemical device comprising same. The polymer electrolyte membrane of the present invention comprises: a non-crosslinked ion conductor; and a porous support having a plurality of pores filled with the ion conductor, wherein the porous support comprises a polymer having at least one crosslinking functional group, and the crosslinking functional group is a functional group which, when the ion conductor is deteriorated, can cause crosslinking of the ion conductor by binding to the deteriorated ion conductor.

Abstract: Proposed is an electric vehicle air conditioning system and a control method therefor, the air conditioning system being capable of preventing a phenomenon in which flash fogging occurs on a windshield. The method for the electric vehicle air conditioning system includes determining whether a current air conditioning mode is set to a cooling mode or a heating mode, determining whether a request for entering an internal heat exchanger dry mode is received when the current air conditioning mode is set to the heating mode, entering the internal heat exchanger dry mode and performing an drying operation of an internal heat exchanger for a predetermined time when the request for entering the internal heat exchanger dry mode is received, and operating a set normal heating mode when the internal heat exchanger dry mode is finished.

Abstract: A display device includes: a display panel including a pixel having an emissive area, and a sensor having a sensing area; and an anti-reflection layer on the display panel, the anti-reflection layer including: a light blocking layer having a first opening overlapping with the emissive area, a second opening overlapping with the sensing area, and an intermediate opening between the first opening and the second opening; a color filter covering the first opening; an over-coating layer on the light blocking layer, and covering the color filter; and a light blocking pattern on the over-coating layer, and overlapping with an area between the intermediate opening and the first opening.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: Provided are a composite formulation including sitagliptin and dapagliflozin and a method of preparing the same.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: Provided is a light unit including a plurality of LED light sources formed on a PCB, a resin layer stacked on the PCB to diffuse and guide emitted light forwards, and a diffusion plate having an optical pattern printed thereon to shield light emitted from the LED light sources. The optical pattern is composed of a diffusion pattern implemented as at least one layer, or a combination of the diffusion pattern layer and a light shielding pattern. The light unit forms an optical pattern for shielding or diffusing light on a surface of a light diffusion plate of the back-light unit, and combines a diffusion pattern and a metal pattern to attain uniformity of light and realize a yellow-light shielding effect, thus leading to a reliable light quality.