Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: Provided are a composite formulation including sitagliptin and dapagliflozin and a method of preparing the same.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: Disclosed is a pharmaceutical formulation containing esomeprazole or a pharmaceutically acceptable salt thereof. The pharmaceutical formulation, based on considerably improved pH-dependent drug release characteristics, starts to release the esomeprazole or a pharmaceutically acceptable salt thereof at a target delay time after oral administration, continues the release for a predetermined time, and finishes the release after a predetermined time, thereby providing excellent patient convenience and excellent therapeutic effects, as compared to conventional other formulations.

Abstract: A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

Abstract: A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

Abstract: A washing machine and an operating method of the washing machine are provided. In the operating method of the washing machine, it is determined whether a washing machine has a regular laundry load or a single laundry load based on the amount of laundry and the number of times of detection of the amount of laundry. Therefore, it is possible to precisely determine the laundry load of a washing machine, reduce the time taken to determine the laundry load of a washing machine, and prevent a washing machine from being damaged by a misreading of the laundry load of a washing machine.

Abstract: A washing machine having height adjustable legs is provided. The washing machine may include a base provided at a bottom of the washing machine, a plurality of legs coupled to the base, and an over-unscrewed prevention member provided with each leg. Each leg may include a bolt that is height-adjustably assembled at the base. The over-unscrewed prevention member may be provided at the bolt of each leg and caught by the base when the legs are unscrewed so as to set a maximum unscrew height of the legs.

Abstract: A defrosting method of a drum-type washing machine is provided. The defrosting method includes performing a warm water supply operation upon receiving a defrost command; performing a water discharge operation; performing a heating operation if a water level has not yet decreased; and performing an additional water discharge operation.

Abstract: A device for controlling the head pressure in a miniature printer is disclosed. A pair of hinge parts with an elongate shaft retaining slot in each of them are installed on the bottom of the head frame so as for a printer head to be closely contacted to the surface of a platen roller. Elastic members are fixed to the head frame, and a supporting bracket is installed in rear of the head frame across the elastic members so as to be pivoted together with the head frame, so that a stable running of the printer paper is ensured, and that the printing state is made clear. A shaft passes through the shaft retaining elongate slots, and thus, the head frame and a supporting bracket are secured on a base plate. A locking piece is installed in contact with the supporting bracket.