Patents by Inventor Kwan-Woo Ryu
Kwan-Woo Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984057Abstract: A display device includes a display panel, controller configured to generate a second data enable signal and second image data based on a first data enable signal and first image data, and generate an output data enable signal and output image data by performing a black data insertion operation, and data driver configured to provide data signals based on the output data enable signal and the output image data, where the controller obtains a delay time between the first data enable signal and the second data enable signal or the first image data and the second image data, determines a number of subsequent pulses of the output data enable signal during a period from one time point within a frame period to an end time point of the frame period, and adjusts a cycle of the subsequent pulses based on the delay time and the number of the subsequent pulses.Type: GrantFiled: July 21, 2022Date of Patent: May 14, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Seungyoung Choi, Seongjun Kim, Jae Woo Ryu, Youngsoo Sohn, Kwan-Young Oh
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Publication number: 20240136674Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference. The first electrode includes a first active material portion coated with an active material layer and a first uncoated portion not coated with an active material layer along a winding direction. At least a part of the first uncoated portion is defined as an electrode tab by itself. The first uncoated portion includes a first portion adjacent to the core of the electrode assembly, a second portion adjacent to the outer circumference of the electrode assembly, and a third portion interposed between the first portion and the second portion. The first portion or the second portion has a smaller height than the third portion in the winding axis direction.Type: ApplicationFiled: January 19, 2022Publication date: April 25, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Jong-Sik PARK, Jae-Won LIM, Yu-Sung CHOE, Hak-Kyun KIM, Je-Jun LEE, Byoung-Gu LEE, Duk-Hyun RYU, Kwan-Hee LEE, Jae-Eun LEE, Pil-Kyu PARK, Kwang-Su HWANGBO, Do-Gyun KIM, Geon-Woo MIN, Hae-Jin LIM, Min-Ki JO, Su-Ji CHOI, Bo-Hyun KANG, Jae-Woong KIM, Ji-Min JUNG, Jin-Hak KONG, Soon-O LEE, Kyu-Hyun CHOI
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Publication number: 20240128517Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.Type: ApplicationFiled: January 19, 2022Publication date: April 18, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Hae-Jin LIM, Jin-Hak KONG, Soon-O LEE, Kyu-Hyun CHOI, Do-Gyun KIM, Su-Ji CHOI, Kwang-Su HWANGBO, Geon-Woo MIN, Min-Ki JO, Jae-Won LIM, Hak-Kyun KIM, Je-Jun LEE, Ji-Min JUNG, Jae-Woong KIM, Jong-Sik PARK, Yu-Sung CHOE, Byoung-Gu LEE, Duk-Hyun RYU, Kwan-Hee LEE, Jae-Eun LEE, Bo-Hyun KANG, Pil-Kyu PARK
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Publication number: 20240121924Abstract: A water-cooled heat dissipation module assembly capable of cooling a power module of a vehicle driving inverter system using a battery or fuel cell. The water-cooled heat dissipation module assembly includes a housing unit provided in the form of a housing having an opening portion at least partially opened at one side thereof. The housing unit and at least a part of a rim region of the cooling unit are made of a plastic material, and the housing unit and the cooling unit are joined to each other by plastic welding using a laser.Type: ApplicationFiled: August 4, 2022Publication date: April 11, 2024Inventors: Kwan Ho RYU, Jeong Keun LEE, Min Woo LEE, Ju Hyun SUN, Tae Keun PARK, Kang Wook PARK, Lee Cheol JI, Hyeok Chul YANG, Tae Heon KIM, Keun Jae LEE
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Patent number: 9417055Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.Type: GrantFiled: July 14, 2015Date of Patent: August 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Yoon Ryu, Sang-Kil Lee, Chung-Sam Jun, Woo-Seok Ko, Ho-Jeong Kwak, Souk Kim, Kwan-Woo Ryu, Yu-Sin Yang
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Publication number: 20160061583Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.Type: ApplicationFiled: July 14, 2015Publication date: March 3, 2016Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Yoon RYU, Sang-Kil LEE, Chung-Sam JUN, Woo-Seok KO, Ho-Jeong KWAK, Souk KIM, Kwan-Woo RYU, Yu-Sin YANG
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Patent number: 9255789Abstract: Methods for measuring a thickness of an object including acquiring at least one of a wavelength domain spectrum for an amplitude ratio (?) and a phase difference (?) of reflected light from a film material, converting the wavelength domain spectrum into a 1/wavelength domain spectrum, acquiring a resulting spectrum by performing fast fourier transform (FFT) on the 1/wavelength domain spectrum, and measuring a thickness of the film material from the resulting spectrum may be provided.Type: GrantFiled: May 23, 2014Date of Patent: February 9, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jang-Ik Park, Il-Hwan Nam, Kwan-Woo Ryu
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Publication number: 20150029517Abstract: Methods for measuring a thickness of an object including acquiring at least one of a wavelength domain spectrum for an amplitude ratio (?) and a phase difference (?) of reflected light from a film material, converting the wavelength domain spectrum into a 1/wavelength domain spectrum, acquiring a resulting spectrum by performing fast fourier transform (FFT) on the 1/wavelength domain spectrum, and measuring a thickness of the film material from the resulting spectrum may be provided.Type: ApplicationFiled: May 23, 2014Publication date: January 29, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jang-Ik PARK, Il-Hwan NAM, Kwan-Woo RYU
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Patent number: 8551791Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.Type: GrantFiled: June 24, 2009Date of Patent: October 8, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jang-Ik Park, Chung-Sam Jun, Hwan-Shik Park, Ji-Hye Kim, Kwan-Woo Ryu, Kong-Jung Sa, So-Yeon Yun
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Publication number: 20090325326Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.Type: ApplicationFiled: June 24, 2009Publication date: December 31, 2009Inventors: Jang-Ik Park, Chung-Sam Jun, Hwan-Shik Park, Ji-Hye Kim, Kwan-Woo Ryu, Kong-Jung Sa, So-Yeon Yun
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Publication number: 20070222999Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.Type: ApplicationFiled: February 26, 2007Publication date: September 27, 2007Applicant: SAMSUNG ELECTRONICS CO., LTDInventors: Yun-Jung Lee, Sun-Yong Choi, Chung-Sam Jun, Kwan-Woo Ryu
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Patent number: 7186577Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.Type: GrantFiled: February 27, 2004Date of Patent: March 6, 2007Assignee: Samsung Electronics Co. Ltd.Inventors: Yun-Jung Jee, Sun-Yong Choi, Chung-Sam Jun, Kwan-Woo Ryu
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Patent number: 6927077Abstract: An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.Type: GrantFiled: November 12, 2003Date of Patent: August 9, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-Min Eom, Yu-Sin Yang, Kwan-Woo Ryu, Park-Song Kim, Sang-Mun Chon, Sun-Yong Choi, Chung-Sam Jun
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Patent number: 6869215Abstract: A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.Type: GrantFiled: May 29, 2003Date of Patent: March 22, 2005Assignee: Samsung Electrics, Co., LTDInventors: Yu-Sin Yang, Sang-Mun Chon, Sun-Yong Choi, Chung Sam Jun, Kwan-Woo Ryu, Park-Song Kim, Tae-Min Eom
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Publication number: 20040253750Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.Type: ApplicationFiled: February 27, 2004Publication date: December 16, 2004Applicant: Samsung Electronics Co., Ltd.Inventors: Yun-Jung Jee, Sun-Yong Choi, Chung-Sam Jun, Kwan-Woo Ryu
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Publication number: 20040105486Abstract: A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.Type: ApplicationFiled: May 29, 2003Publication date: June 3, 2004Inventors: Yu-Sin Yang, Sang-Mun Chon, Sun-Yong Choi, Chung Sam Jun, Kwan-Woo Ryu, Park-Song Kim, Tae-Min Eom
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Publication number: 20040100298Abstract: An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.Type: ApplicationFiled: November 12, 2003Publication date: May 27, 2004Inventors: Tae-Min Eom, Yu-Sin Yang, Kwan-Woo Ryu, Park-Song Kim, Sang-Mun Chon, Sun-Yong Choi, Chung-Sam Jun