Abstract: A semiconductor device includes a first stack structure on a substrate, and a second stack structure on the first stack structure. A channel structure extends through the first stack structure and the second stack structure. A first auxiliary stack structure including a plurality of first insulating layers and a plurality of first mold layers are alternately stacked on the substrate. An alignment key extends into the first auxiliary stack structure and protrudes to a higher level than an uppermost end of the first stack structure. A second auxiliary stack structure is disposed on the first auxiliary stack structure and the alignment key, and includes a plurality of second insulating layers and a plurality of second mold layers alternately stacked. The second auxiliary stack structure includes a protrusion aligned with the alignment key.

Abstract: A semiconductor memory device includes a substrate having a first region, a second region, and a third region main separation regions extending in the first direction and apart from each other in a second direction, first auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction, and second auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction. The first auxiliary separation regions are at a first pitch in the second direction between the main separation regions, the second auxiliary separation regions are disposed at a second pitch, smaller than the first pitch in the second direction between the main separation regions, and the first auxiliary separation regions and the second auxiliary separation regions are shifted from each other in the second direction.

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

Abstract: A semiconductor device including a stack structure including gate stack and dummy stack regions; a vertical memory structure penetrating through the gate stack region; and a first vertical dummy structure penetrating through a portion of the dummy stack region, wherein the gate stack region includes interlayer insulating and gate layers alternately and repeatedly stacked on each other, the dummy stack region includes dummy insulating and dummy horizontal layers alternately and repeatedly stacked on each other, at least one of the dummy horizontal layers and the gate layers include materials different from each other, an upper surface of the vertical memory structure is at a higher level than an upper surface of the first vertical dummy structure, and a lowermost dummy upper horizontal layer at a higher level than the first vertical dummy structure overlaps the first vertical dummy structure.

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

Abstract: A semiconductor device includes a first stack structure on a substrate, and a second stack structure on the first stack structure. A channel structure extends through the first stack structure and the second stack structure. A first auxiliary stack structure including a plurality of first insulating layers and a plurality of first mold layers are alternately stacked on the substrate. An alignment key extends into the first auxiliary stack structure and protrudes to a higher level than an uppermost end of the first stack structure. A second auxiliary stack structure is disposed on the first auxiliary stack structure and the alignment key, and includes a plurality of second insulating layers and a plurality of second mold layers alternately stacked. The second auxiliary stack structure includes a protrusion aligned with the alignment key.

Abstract: An integrated circuit device includes a plurality of word lines, a string selection line structure stacked on the plurality of word lines, and a plurality of channel structures extending in a vertical direction through the plurality of word lines and the string selection line structure. The string selection line structure includes a string selection bent line including a lower horizontal extension portion extending in a horizontal direction at a first level higher than the plurality of word lines, an upper horizontal extension portion extending in the horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.

Abstract: An integrated circuit device includes a plurality of word lines, a string selection line structure stacked on the plurality of word lines, and a plurality of channel structures extending in a vertical direction through the plurality of word lines and the string selection line structure. The string selection line structure includes a string selection bent line including a lower horizontal extension portion extending in a horizontal direction at a first level higher than the plurality of word lines, an upper horizontal extension portion extending in the horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.

Abstract: A semiconductor memory device includes a substrate having a first region, a second region, and a third region main separation regions extending in the first direction and apart from each other in a second direction, first auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction, and second auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction. The first auxiliary separation regions are at a first pitch in the second direction between the main separation regions, the second auxiliary separation regions are disposed at a second pitch, smaller than the first pitch in the second direction between the main separation regions, and the first auxiliary separation regions and the second auxiliary separation regions are shifted from each other in the second direction.

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.

Abstract: An integrated circuit device includes a plurality of word lines, a string selection line structure stacked on the plurality of word lines, and a plurality of channel structures extending in a vertical direction through the plurality of word lines and the string selection line structure. The string selection line structure includes a string selection bent line including a lower horizontal extension portion extending in a horizontal direction at a first level higher than the plurality of word lines, an upper horizontal extension portion extending in the horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.

Abstract: Disclosed is a battery module including a base plate on which unit modules, each with two or more secondary batteries therein, are stacked in a vertically erected state, a pair of end plates disposed in tight contact with outer surfaces of outermost unit modules while bottoms of the end plates are fixed to the base plate, and supporting bars connected between opposite sides of upper or side parts of the end plates so as to support the end plates, wherein each of the end plates includes a main body contacting a corresponding one of the unit modules, and a top wall, a bottom wall, and a pair of side walls protruding outward from the perimeter of the main body, the thickness of each of the side walls being increased from the top to the bottom wall, thereby dispersing pressure (bending load) from the unit modules and the supporting bars.

Abstract: Disclosed is a battery module including a base plate on which unit modules, each with two or more secondary batteries therein, are stacked in a vertically erected state, a pair of end plates disposed in tight contact with outer surfaces of outermost unit modules while bottoms of the end plates are fixed to the base plate, and supporting bars connected between opposite sides of upper or side parts of the end plates so as to support the end plates, wherein each of the end plates includes a main body contacting a corresponding one of the unit modules, and a top wall, a bottom wall, and a pair of side walls protruding outward from the perimeter of the main body, the thickness of each of the side walls being increased from the top to the bottom wall, thereby dispersing pressure (bending load) from the unit modules and the supporting bars.

Abstract: Disclosed herein is a battery cartridge having a plate-shaped battery cell mounted therein, wherein the battery cartridge includes a pair of plate-shaped frames configured to fix opposite sides of the battery cell at the edge thereof in a state in which the sides of the battery cell are open, and each of the frames is provided at the inside thereof, disposed in contact with the edge of the battery cell, with an elastic pressing member configured to press the edge of the battery cell.

Abstract: Disclosed is a battery module including a base plate on which unit modules, each with two or more secondary batteries therein, are stacked in a vertically erected state, a pair of end plates disposed in tight contact with outer surfaces of outermost unit modules while bottoms of the end plates are fixed to the base plate, and supporting bars connected between opposite sides of upper or side parts of the end plates so as to support the end plates, wherein each of the end plates includes a main body contacting a corresponding one of the unit modules, and a top wall, a bottom wall, and a pair of side walls protruding outward from the perimeter of the main body, the thickness of each of the side walls being increased from the top to the bottom wall, thereby dispersing pressure (bending load) from the unit modules and the supporting bars.

Abstract: Disclosed is a battery module including a base plate on which unit modules, each with two or more secondary batteries therein, are stacked in a vertically erected state, a pair of end plates disposed in tight contact with outer surfaces of outermost unit modules while bottoms of the end plates are fixed to the base plate, and supporting bars connected between opposite sides of upper or side parts of the end plates so as to support the end plates, wherein each of the end plates includes a main body contacting a corresponding one of the unit modules, and a top wall, a bottom wall, and a pair of side walls protruding outward from the perimeter of the main body, the thickness of each of the side walls being increased from the top to the bottom wall, thereby dispersing pressure (bending load) from the unit modules and the supporting bars.

Abstract: Disclosed herein is a battery cartridge having a plate-shaped battery cell mounted therein, wherein the battery cartridge includes a pair of plate-shaped frames configured to fix opposite sides of the battery cell at the edge thereof in a state in which the sides of the battery cell are open, and each of the frames is provided at the inside thereof, disposed in contact with the edge of the battery cell, with an elastic pressing member configured to press the edge of the battery cell.