Abstract: Disclosed are a multi-chip assembly and a method for driving the same. The multi-chip assembly includes a first chip designed with a first device driven by a first power source and a second chip designed with a second device driven by a second power source. A power applying section applies first power to the first device of the first chip and a power converting section converts the first power to second power upon receiving the first power from the power applying section and applies the second power to the second device of the second chip. It is possible to provide the multi-chip assembly in the form of a package fabricated by stacking chips designed with mutually different devices driven through a single power source.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration non-volatile memory device.

Abstract: The present invention relates to a method of manufacturing a flash memory cell. In order to solve a problem that a reliability of a device is degraded according as electron injected into a floating gate leaks to an exterior due to various stimulus, the floating gate of the flash memory cell is formed dividely into a upper layer and a lower layer with respect to a charge barrier layer so that the leakage of the electrons injected into the floating gate can be prevented from external stimulus, thereby improving a reliability of the memory device.