Patents by Inventor Kwok K. Loi

Kwok K. Loi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Unipolar diode with low turn-on voltage
    Patent number: 8334550
    Abstract: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.
    Type: Grant
    Filed: June 9, 2011
    Date of Patent: December 18, 2012
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Donald J. Sawdai, Kwok K. Loi, Vesna Radisic
  • UNIPOLAR DIODE WITH LOW TURN-ON VOLTAGE
    Publication number: 20120313105
    Abstract: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.
    Type: Application
    Filed: June 9, 2011
    Publication date: December 13, 2012
    Inventors: Donald J. Sawdai, Kwok K. Loi, Vesna Radisic