Patents by Inventor Kwok Leung Ma

Kwok Leung Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8007910
    Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: August 30, 2011
    Assignee: City University of Hong Kong
    Inventors: Wenjun Zhang, Shuit-Tong Lee, Igor Bello, Kar Man Leung, He-qin Li, You-Shen Zou, Yat Ming Chong, Kwok Leung Ma
  • Patent number: 7579759
    Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.
    Type: Grant
    Filed: June 11, 2007
    Date of Patent: August 25, 2009
    Assignee: City University of Hong Kong
    Inventors: Shuit-Tong Lee, Wen-Jun Zhang, You-Sheng Zou, Igor Bello, Kwok Leung Ma, Kar Man Leung, Yat Ming Chong
  • Publication number: 20090022969
    Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion.
    Type: Application
    Filed: July 19, 2007
    Publication date: January 22, 2009
    Applicant: City University of Hong Kong
    Inventors: Wenjun Zhang, Shuit-Tong Lee, Igor Bello, Kar Man Leung, He-qin Li, You-Shen Zou, Yat Ming Chong, Kwok Leung Ma
  • Publication number: 20080303378
    Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.
    Type: Application
    Filed: June 11, 2007
    Publication date: December 11, 2008
    Applicant: CITY UNIVERSITY OF HONG KONG
    Inventors: Shuit-Tong LEE, Wen-Jun ZHANG, You-Sheng ZOU, Igor BELLO, Kwok Leung MA, Kar Man LEUNG, Yat Ming CHONG