Patents by Inventor Kwok Manus Wong
Kwok Manus Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8279577Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.Type: GrantFiled: August 2, 2010Date of Patent: October 2, 2012Assignee: Applied Materials, Inc.Inventors: Andrew Nguyen, Wing Lau Cheng, Hiroji Hanawa, Semyon Kats, Kartik Ramaswamy, Yan Ye, Kwok Manus Wong, Daniel J. Hoffman, Tetsuya Ishikawa, Brian C. Lue
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Publication number: 20110024047Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.Type: ApplicationFiled: August 2, 2010Publication date: February 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Andrew NGUYEN, Wing Lau CHENG, Hiroji HANAWA, Semyon L. KATS, Kartik RAMASWAMY, Yan YE, Kwok Manus WONG, Daniel J. HOFFMAN, Tetsuya ISHIKAWA, Brian C. LUE
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Patent number: 7768765Abstract: A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.Type: GrantFiled: March 8, 2007Date of Patent: August 3, 2010Assignee: Applied Materials, Inc.Inventors: Andrew Nguyen, Wing Lau Cheng, Hiroji Hanawa, Semyon L. Kats, Kartik Ramaswamy, Yan Ye, Kwok Manus Wong, Daniel J. Hoffman, Tetsuya Ishikawa, Brian C. Lue
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Patent number: 7221553Abstract: A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.Type: GrantFiled: April 22, 2003Date of Patent: May 22, 2007Assignee: Applied Materials, Inc.Inventors: Andrew Nguyen, Wing Lau Cheng, Hiroji Hanawa, Semyon L. Kats, Kartik Ramaswamy, Yan Ye, Kwok Manus Wong, Daniel J. Hoffman, Tetsuya Ishikawa, Brian C. Lue
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Patent number: 6824748Abstract: A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.Type: GrantFiled: June 1, 2001Date of Patent: November 30, 2004Assignee: Applied Materials, Inc.Inventors: Tony S. Kaushal, Shamouil Shamouilian, Harshad Borgaonkar, Kwok Manus Wong, Michael G. Chafin, Ashish Bhatnagar
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Publication number: 20040212947Abstract: A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.Type: ApplicationFiled: April 22, 2003Publication date: October 28, 2004Applicant: Applied Materials, Inc.Inventors: Andrew Nguyen, Wing Lau Cheng, Hiroji Hanawa, Semyon L. Kats, Kartik Ramaswamy, Yan Ye, Kwok Manus Wong, Daniel J. Hoffman, Tetsuya Ishikawa, Brian C. Lue
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Patent number: 6759624Abstract: A vacuum chamber, such as a semiconductor wafer plasma processing chamber, is heated by use of a ceramic igniter array consisting of a plurality of ceramic igniters positioned in a substrate.Type: GrantFiled: May 7, 2002Date of Patent: July 6, 2004Inventors: Ananda H. Kumar, Tetsuya Ishikawa, Kwok Manus Wong, Farahmand E. Askarinam
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Patent number: 6673323Abstract: A method for reducing hazardous gases exhausted from a process chamber includes an effluent gas treatment system with a gas energizing reactor and an additive gas source. Additive gas comprising reactive gas is introduced into the effluent from the process chamber in a volumetric flow rate in relation to the hazardous gas content in the effluent.Type: GrantFiled: March 24, 2000Date of Patent: January 6, 2004Assignee: Applied Materials, Inc.Inventors: Ashish Bhatnagar, Tony S. Kaushal, Kwok Manus Wong, Shamouil Shamouilian
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Publication number: 20030209526Abstract: The present invention relates to novel heaters and methods of heating a vacuum chamber, such as a semiconductor wafer plasma processing chamber, using a ceramic igniter array consisting of a plurality of ceramic igniters positioned in a substrate.Type: ApplicationFiled: May 7, 2002Publication date: November 13, 2003Applicant: Applied Materials, Inc.Inventors: Ananda H. Kumar, Tetsuya Ishikawa, Kwok Manus Wong, Farahmand E. Askarinam
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Patent number: 6642489Abstract: A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.Type: GrantFiled: January 9, 2001Date of Patent: November 4, 2003Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Dennis S. Grimard, Philip M. Salzman, Liang-Guo Wang, Kwok Manus Wong
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Publication number: 20030192646Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.Type: ApplicationFiled: April 12, 2002Publication date: October 16, 2003Applicant: Applied Materials, Inc.Inventors: Robert W. Wu, Wing L. Cheng, You Wang, Senh Thach, Hamid Noorbakhsh, Kwok Manus Wong, Jennifer Y. Sun
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Patent number: 6494958Abstract: A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.Type: GrantFiled: June 29, 2000Date of Patent: December 17, 2002Assignee: Applied Materials Inc.Inventors: Shamouil Shamouilian, Jon M. McChesney, Kwok Manus Wong, Liang-Guo Wang, Alexander M. Veytser, Dennis S. Grimard
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Publication number: 20020182131Abstract: A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.Type: ApplicationFiled: June 1, 2001Publication date: December 5, 2002Applicant: APPLIED MATERIALS, INC.Inventors: Tony S. Kaushal, Shamouil Shamouilian, Harshad Borgaonkar, Kwok Manus Wong, Michael G. Chafin, Ashish Bhatnagar
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Patent number: 6478924Abstract: A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.Type: GrantFiled: March 7, 2000Date of Patent: November 12, 2002Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, Arnold Kholodenko, Kwok Manus Wong, Liang-Guo Wang, Alexander M. Veytser, Dennis S. Grimard
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Publication number: 20020088797Abstract: A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system comprises a transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.Type: ApplicationFiled: January 9, 2001Publication date: July 11, 2002Applicant: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Dennis S. Grimard, Philip M. Salzman, Liang-Guo Wang, Kwok Manus Wong
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Patent number: 6391146Abstract: An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion resistant inner surface 280. Optionally, an additive gas source 230 may be provided to introduce additive gas into the gas energizing reactor 210. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.Type: GrantFiled: April 11, 2000Date of Patent: May 21, 2002Assignee: Applied Materials, Inc.Inventors: Ashish Bhatnagar, Kartik Ramaswamy, Tony S. Kaushal, Kwok Manus Wong, Shamouil Shamouilian
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Patent number: 6367412Abstract: A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.Type: GrantFiled: February 17, 2000Date of Patent: April 9, 2002Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Kwok Manus Wong, Ashish Bhatnagar, Mehran Moalem, Tony S. Kaushal, Shamouil Shamouilian