Abstract: Systems and methods are provided for AI-based inbound plan generation. Systems and methods include predicting, using a model, available storage associated with a first fulfillment center; predicting a demand capacity associated with the first fulfillment center; using the predicted available storage and the predicted demand capacity, calculating an excess demand quantity; determining one or more fungible capacity types associated with the excess demand quantity; determining available fungible capacity type quantities in at least one fulfillment center; using the one or more fungible capacity types associated with the excess demand quantity and the available fungible capacity type quantities in at least one fulfillment center, generate an inbound plan for the first fulfillment center; receive a notification of one or more incoming products; and distribute the one or more incoming products according to the generated inbound plan.

Abstract: Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.

Abstract: The invention relates to a method of forming wiring in a semiconductor device. In order to prevent a lift or a crack generated when nitride films having different physical properties come in contact, the invention uses a nitride film having a similar stress characteristic; a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a single type chamber capable of processing wafers one by one, and a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a batch type chamber capable of processing several sheet of wafers.

Abstract: A view port of chemical vapor deposition apparatus for manufacturing semiconductor devices prevents heat loss in a chamber during a plasma deposition process. The view port includes a bracket protruding at the circumference of an opening in an electrode serving as a wall of a chamber of the apparatus, a transparent window pressed by the bracket against the wall via an O-ring, a pivoting cap for capping an opening in the bracket aligned with the window, and heat-insulative material and/or a heating element integral with the cap so as to be positioned close to the window when the cap is closed. The heating element can be a resistive heating wire or a warm air duct formed by a hose or the like. During the deposition process, the temperature of the window is maintained, thereby minimizing the tendency of polymer to adhere to the window.

Abstract: A view port of chemical vapor deposition apparatus for manufacturing semiconductor devices prevents heat loss in a chamber during a plasma deposition process. The view port includes a bracket protruding at the circumference of an opening in an electrode serving as a wall of a chamber of the apparatus, a transparent window pressed by the bracket against the wall via an O-ring, a pivoting cap for capping an opening in the bracket aligned with the window, and heat-insulative material and/or a heating element integral with the cap so as to be positioned close to the window when the cap is closed. The heating element can be a resistive heating wire or a warm air duct formed by a hose or the like. During the deposition process, the temperature of the window is maintained, thereby minimizing the tendency of polymer to adhere to the window.

Abstract: A plasma processing apparatus includes a plasma generating electrode containing at least one protrusion for improving the plasma density and uniformity. The apparatus may be a plasma dry etching apparatus, a plasma enhanced CVD deposition apparatus or a sputtering apparatus.

Abstract: A wafer sensing apparatus for sensing whether a wafer is inserted in a wafer cassette. The wafer sensing apparatus includes a light emitting device for emitting light of a predetermined wavelength toward the inside of a wafer cassette, a light sensing device, positioned opposite to the light emitting device, for sensing the emitted light, and an optical filter device for passing light corresponding only to the predetermined wavelength of light emitted from the light emitting device. The light sensing device is not affected by interference light from outside sources that can cause a faulty wafer sensing function, since the interfering light is reflected or absorbed by the optical filter device. Equipment malfunctions caused by faulty sensing from the light sensing device are prevented, thereby improving the equipment operating efficiency.