Abstract: A device according to embodiments of the invention includes a semiconductor device structure (10) including a light emitting region (14) disposed between an n-type semiconductor region (16) and a p-type semiconductor region (12). A surface of the p-type semiconductor region (12) perpendicular to a growth direction of the semiconductor device structure (10) includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact (21) disposed on the p-type semiconductor region (12) and an n-contact (26) disposed on the n-type semiconductor region (16). The p-contact (21) includes a contact metal layer (20) and a blocking material layer (24). The blocking material layer (24) is disposed over the first portion and no blocking material layer (24) is disposed over the second portion.

Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-Type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.