Abstract: An integrated circuit device according to the inventive concept includes: a semiconductor substrate including a cell region and a connection region; a gate stack including a plurality of gate electrodes and a plurality of insulating layers extending on a main surface of the semiconductor substrate in a horizontal direction and alternately stacked thereon in a vertical direction, the gate stack having a stair structure in the connection region; and a plurality of contact plugs in the connection region, wherein, in a portion of the connection region, a first length, in the horizontal direction, of a first gate electrode that is located in the lowest layer among the plurality of gate electrodes is less than a second length, in the horizontal direction, of a second gate electrode that is located above the first gate electrode.

Abstract: An integrated circuit device according to the inventive concept includes: a semiconductor substrate including a cell region and a connection region; a gate stack including a plurality of gate electrodes and a plurality of insulating layers extending on a main surface of the semiconductor substrate in a horizontal direction and alternately stacked thereon in a vertical direction, the gate stack having a stair structure in the connection region; and a plurality of contact plugs in the connection region, wherein, in a portion of the connection region, a first length, in the horizontal direction, of a first gate electrode that is located in the lowest layer among the plurality of gate electrodes is less than a second length, in the horizontal direction, of a second gate electrode that is located above the first gate electrode.