Abstract: A carrier belt for fabricating a device or component such as an anisotropic conductive film. The carrier belt includes a substrate having a sacrificial image enhancing layer. Microcavities are formed in the carrier by laser ablation through the image enhancing layer. After the image enhancement layer is removed, a plurality of conductive particles are distributed into an array of microcavities formed by laser ablation on a surface of a carrier belt and transferred to an adhesive layer. The image enhancing layer enables one to form microcavities with a fine pitch and spacing and partitions having a high aspect ratio.

Abstract: A method for fabricating an electronic device or component such as an anisotropic conductive film comprising: distributing a plurality of conductive particles into an array of microcavities formed on a surface of a continuous carrier belt, rotating the belt carrying the conductive particles while conveying a surface of an adhesive layer into contact with the surface of the rotating belt, transferring the conductive particles from the microcavities on the belt to the adhesive layer in predefined locations in the adhesive layer corresponding to the array of microcavities on the belt, and separating the adhesive layer from the surface of the belt. In one embodiment, the position of the microcavities is varied in a controlled manner.

Abstract: A carrier belt for fabricating a device or component such as an anisotropic conductive film. The carrier belt includes a substrate having a sacrificial image enhancing layer. Microcavities are formed in the carrier by laser ablation through the image enhancing layer. After the image enhancement layer is removed, a plurality of conductive particles are distributed into an array of microcavities formed by laser ablation on a surface of a carrier belt and transferred to an adhesive layer. The image enhancing layer enables one to form microcavities with a fine pitch and spacing and partitions having a high aspect ratio.

Abstract: An anisotropic conductive film (ACF) comprising: (a) an adhesive layer having a substantially uniform thickness; and (b) a plurality of conductive particles individually adhered to the adhesive layer, wherein the conductive particles include a first non-random array of particle sites partially embedded at a first depth within the adhesive layer and a second fixed non-random array or dispersion of conductive particles partially embedded at a second depth or a dispersion of conductive particles fully embedded within the adhesive layer, wherein the first depth and the second depth are distinctly different. The ACF may be supplied as a sheet, a continuous film or as a roll and the multi-tier morphology may be present throughout the length of the product or in select areas.

Abstract: A method for fabricating an electronic device or component such as an anisotropic conductive film comprising: distributing a plurality of conductive particles into an array of microcavities formed on a surface of a continuous carrier belt, rotating the belt carrying the conductive particles while conveying a surface of an adhesive layer into contact with the surface of the rotating belt, transferring the conductive particles from the microcavities on the belt to the adhesive layer in predefined locations in the adhesive layer corresponding to the array of microcavities on the belt, and separating the adhesive layer from the surface of the belt. In one embodiment, the position of the microcavities is varied in a controlled manner.

Abstract: An integrated circuit package and method of manufacture is provided. A substrate having a number of contact pads exposed through a passivation layer thereon has a first under bump metallurgy layer over at least one of the contact pads. A top under bump metallurgy layer of copper having a thickness of less than about 800 angstroms is formed over the first under bump metallurgy layer.

Abstract: A method for manufacturng an integrated circuit package is provided with a substrate having first and second contact pads exposed through a passivation layer on the substrate. A first metallurgy layer is formed over the substrate. A second metallurgy layer is formed over the first metallurgy layer. The first metallurgy layer is removed while leaving a portion thereof over the second contact pad. The second metallurgy layer is removed while leaving a portion thereof over the second contact pad. A protective layer is formed over the first contact pad while removing the first metallurgy layer.