Patents by Inventor Kye-Chul Choi

Kye-Chul Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230389358
    Abstract: A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.
    Type: Application
    Filed: August 8, 2023
    Publication date: November 30, 2023
    Applicant: LG Display Co., Ltd.
    Inventors: Seong-Pil CHO, Dong-Yup KIM, Kyung-Mo SON, Sang-Soon NOH, Jun-Seuk LEE, Yong-Bin KANG, Kye-Chul CHOI, Sung-Ho MOON, Sang-Gul LEE, Byeong-Keun KIM, Kyoung-Soo LEE, Hyun-Gyo JEONG, Jin-Kyu ROH, Jung-Doo JIN, Ki-Hyun KWON, Hee-Jin JUNG, Jang-Dae KIM, Won-Ho SON, Chan-Ho KIM
  • Patent number: 11765935
    Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: September 19, 2023
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Seong-Pil Cho, Dong-Yup Kim, Kyung-Mo Son, Sang-Soon Noh, Jun-Seuk Lee, Yong-Bin Kang, Kye-Chul Choi, Sung-Ho Moon, Sang-Gul Lee, Byeong-Keun Kim, Kyoung-Soo Lee, Hyun-Gyo Jeong, Jin-Kyu Roh, Jung-Doo Jin, Ki-Hyun Kwon, Hee-Jin Jung, Jang-Dae Kim, Won-Ho Son, Chan-Ho Kim
  • Publication number: 20230207570
    Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.
    Type: Application
    Filed: February 27, 2023
    Publication date: June 29, 2023
    Inventors: So-Young Noh, Ki-Tae Kim, Kyeong-Ju Moon, Hyuk Ji, Jin-Kyu Roh, Jung-Doo Jin, Kye-Chul Choi, Dong-Yup Kim, Chan-Ho Kim
  • Patent number: 11616082
    Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.
    Type: Grant
    Filed: July 3, 2020
    Date of Patent: March 28, 2023
    Assignee: LG Display Co., Ltd.
    Inventors: So-Young Noh, Ki-Tae Kim, Kyeong-Ju Moon, Hyuk Ji, Jin-Kyu Roh, Jung-Doo Jin, Kye-Chul Choi, Dong-Yup Kim, Chan-Ho Kim
  • Publication number: 20210005693
    Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.
    Type: Application
    Filed: July 6, 2020
    Publication date: January 7, 2021
    Applicant: LG Display Co., Ltd.
    Inventors: Seong-Pil CHO, Dong-Yup KIM, Kyung-Mo SON, Sang-Soon NOH, Jun-Seuk LEE, Yong-Bin KANG, Kye-Chul CHOI, Sung-Ho MOON, Sang-Gul LEE, Byeong-Keun KIM, Kyoung-Soo LEE, Hyun-Gyo JEONG, Jin-Kyu ROH, Jung-Doo JIN, Ki-Hyun KWON, Hee-Jin JUNG, Jang-Dae KIM, Won-Ho SON, Chan-Ho KIM
  • Publication number: 20210005638
    Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.
    Type: Application
    Filed: July 3, 2020
    Publication date: January 7, 2021
    Inventors: So-Young NOH, Ki-Tae KIM, Kyeong-Ju MOON, Hyuk JI, Jin-Kyu ROH, Jung-Doo JIN, Kye-Chul CHOI, Dong-Yup KIM, Chan-Ho KIM
  • Patent number: 5883769
    Abstract: An aluminum head drum for use in a video cassette recorder is coated with a protective layer comprising diamond-like carbon. The protective layer of diamond-like carbon is obtained using a plasma-enhanced chemical vapor deposition method and has a thickness ranging from 0.3 .mu.m to 2.0 .mu.m. The protective layer has a varying mechanical hardness, wherein the mechanical hardness has a maximum value at a region of the protective layer coming in contact with the aluminum head drum, decreases smoothly and continuously and reaches an minimum value at a region of the protective layer coming in contact with atmosphere. Micro-Vicker's hardness of the region of the protective layers coming in contact with a video tape is 1.5-2.0 times that of the magnetic substance constituting the video tape.
    Type: Grant
    Filed: June 30, 1997
    Date of Patent: March 16, 1999
    Assignee: Daewoo Electronics Co., Ltd.
    Inventors: Kye-Chul Choi, Keum-Mo Kim, Kwang-Yong Eun, Kwang-Ryeol Lee
  • Patent number: 5513051
    Abstract: An image signal recording and reproducing apparatus comprises a head array having a plurality of head gaps for recording and reproducing the image; a piezoelectric actuator having a polarization direction and for moving the head array downwards and upwards in a width direction of a track in accordance with input of a driving voltage; a phase comparator for generating a phase control signal in accordance with a phase difference between the head array and the track; a unit for outputting the driving voltage to the actuator in accordance with the phase control signal; and a signal processing unit for recording and reproducing the image signal on and from the track by the head array.
    Type: Grant
    Filed: December 29, 1993
    Date of Patent: April 30, 1996
    Assignee: Daewoo Electronics Co., Ltd.
    Inventors: Jin-Koo Lee, Kye-Chul Choi