Abstract: Provided is an optical system which may acquire a hyperspectral image by acquiring a spectral image of an object to be measured, which includes, to collect spectral data and train the neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, a slit moving to scan the incident image and passing and outputting a part of the formed image, and a first optical part obtaining spectral data by splitting light of the image received through the slit by wavelength. Also, the system includes, to decompose overlapped spectral data and to infer hyperspectral image data through the trained neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, and a first optical part obtaining spectral data by splitting light of the received image by wavelength.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device.

Abstract: Disclosed is a method for forming a gate in a semiconductor device. The method includes the steps of: sequentially forming a gate insulation layer and an inter-layer insulation layer on a substrate; patterning the inter-layer insulation layer into a predetermined configuration, thereby forming a patterned inter-layer insulation layer; forming a nitride layer on the patterned inter-layer insulation layer; simultaneously etching the nitride layer and the substrate, thereby obtaining a spacer on sidewalls of the patterned inter-layer insulation layer and a trench having a predetermined depth in the substrate; forming a conductive layer on the trench; and planarizing the conductive layer, thereby forming the gate.

Abstract: A method for fabricating a capacitor of a semiconductor device. The semiconductor device includes: a bit line structure formed on a substrate and including stacked layers of a bit line, a hard mask and a spacer. The spacer is formed along a profile containing the bit line and the hard mask. A first inter-layer insulation layer is deposited on an entire surface of the bit line structure. A storage node contact plug is formed on the substrate by passing through the inter-layer insulation layer and having a partially etched portion. A second inter-layer insulation layer is formed on a partial portion of the first inter-layer insulation layer and the storage node contact plug.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device.

Abstract: Disclosed is a method for forming a gate in a semiconductor device. The method includes the steps of: sequentially forming a gate insulation layer and an inter- layer insulation layer on a substrate; patterning the inter- layer insulation layer into a predetermined configuration, thereby forming a patterned inter-layer insulation layer; forming a nitride layer on the patterned inter-layer insulation layer; simultaneously etching the nitride layer and the substrate, thereby obtaining a spacer on sidewalls of the patterned inter-layer insulation layer and a trench having a predetermined depth in the substrate; forming a conductive layer on the trench; and planarizing the conductive layer, thereby forming the gate.

Abstract: A method for fabricating a capacitor of a semiconductor device. The semiconductor device includes: a bit line structure formed on a substrate and including stacked layers of a bit line, a hard mask and a spacer. The spacer is formed along a profile containing the bit line and the hard mask. A first inter-layer insulation layer is deposited on an entire surface of the bit line structure. A storage node contact plug is formed on the substrate by passing through the inter-layer insulation layer and having a partially etched portion. A second inter-layer insulation layer is formed on a partial portion of the first inter-layer insulation layer and the storage node contact plug.