Abstract: A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

Abstract: An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

Abstract: In an embodiment, a method of controlling a light intensity includes measuring a critical dimension distribution of a pattern on a substrate. The critical dimension distribution is formed using a first illumination having a first intensity distribution, which is irradiated onto the substrate through a photo mask. A second intensity distribution of the first illumination by regions of the photo mask, which is used for forming a pattern having uniform dimensions on the substrate, is then obtained based on a relation between the first intensity distribution and the critical dimension distribution. The first illumination having the first intensity distribution is converted into a second illumination having the second intensity distribution as by interposing an array of light controlling elements (e.g., LCD pixels, or motorized polarizing elements) within the light path.

Abstract: Embodiments of a test pattern and a method for measuring silicon etching depth are provided. After a contact-hole forming process, an optical critical dimension (OCD) is measured with respect to a test pattern formed on a semiconductor chip, so that the silicon etching depth may be analyzed in real time. Critical dimensions of contact holes in the actual working cells of the semiconductor circuit would then coincide with the OCD measurement of the contact holes of the test pattern. Consequently, etching conditions for forming a contact hole may be controlled in real time, and thus a yield of a semiconductor can be effectively improved.

Abstract: PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed.

Abstract: A method for obtaining an image using a selective combination of wavelengths of light includes dispersing a light in accordance with wavelength bands of the light using a dispersing member, irradiating the dispersed light onto an object to measure reflectivities of the light reflected from the object in accordance with the wavelength bands of the light, comparing reflectivity differences between an objective region and a peripheral region of the object, selecting wavelength bands having the reflectivity differences indicated as either positive values or negative values, adjusting the dispersing member to transmit only the light having the selected wavelength bands, passing light only having the selected wavelength bands through the dispersing member to irradiate the light that has passed through the dispersing member onto the object, taking photographs of the object using the irradiated light, and superposing the photographs of the object to obtain the image of the object.

Abstract: A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

Abstract: An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

Abstract: A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images.

Abstract: A method and an apparatus for measuring a step difference in a semiconductor device without making contact with the semiconductor device. A first beam is radiated onto a wafer so as to form a first focus on a first portion of the wafer, and a second beam is radiated onto the wafer so as to form a second focus on a second portion of the wafer. The step difference between the first portion and the second portion of the wafer is measured by calculating a vertical displacement distance of the wafer and a beam focusing device used to attain the first focus and the second focus.

Abstract: A method for obtaining an image using a selective combination of wavelengths of light includes dispersing a light in accordance with wavelength bands of the light using a dispersing member, irradiating the dispersed light onto an object to measure reflectivities of the light reflected from the object in accordance with the wavelength bands of the light, comparing reflectivity differences between an objective region and a peripheral region of the object, selecting wavelength bands having the reflectivity differences indicated as either positive values or negative values, adjusting the dispersing member to transmit only the light having the selected wavelength bands, passing light only having the selected wavelength bands through the dispersing member to irradiate the light that has passed through the dispersing member onto the object, taking photographs of the object using the irradiated light, and superposing the photographs of the object to obtain the image of the object.

Abstract: A method for inspecting a polishing pad, an apparatus for performing the method, and a polishing device adopting the apparatus for preventing wafer defects. Polishing pad defects are detected by comparing optical data from a normal polishing pad, which does not cause wafer defects, with optical data from a polishing pad to be inspected. The respective optical data are obtained by radiating a beam into the polishing pad and then collecting and analyzing a beam reflected from the polishing pad.

Abstract: A method and an apparatus for measuring a step difference in a semiconductor device without making contact with the semiconductor device. A first beam is radiated onto a wafer so as to form a first focus on a first portion of the wafer, and a second beam is radiated onto the wafer so as to form a second focus on a second portion of the wafer. The step difference between the first portion and the second portion of the wafer is measured by calculating a vertical displacement distance of the wafer and a beam focusing device used to attain the first focus and the second focus.

Abstract: A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images.

Abstract: A method for inspecting a polishing pad, an apparatus for performing the method, and a polishing device adopting the apparatus for preventing wafer defects. Polishing pad defects are detected by comparing optical data from a normal polishing pad, which does not cause wafer defects, with optical data from a polishing pad to be inspected. The respective optical data are obtained by radiating a beam into the polishing pad and then collecting and analyzing a beam reflected from the polishing pad.