Patents by Inventor Kye-Won Maeng

Kye-Won Maeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7482665
    Abstract: A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second conductivity type which is formed using a solid state diffusion process from a surface region to an internal region of the epitaxial layer of second conductivity type, and a silicon oxide film pattern and a silicon nitride film pattern which are sequentially formed on the shallow junction layer.
    Type: Grant
    Filed: April 1, 2005
    Date of Patent: January 27, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kye-won Maeng, Sung-ryoul Bae
  • Patent number: 7465638
    Abstract: There is provided a bipolar transistor (with a respective fabrication method) that provides superior noise characteristics and gain diffusion. The fabricating method includes forming a first base region at a collector region, which in turn is formed on a substrate. A first silicon layer is formed on the base region, and a second silicon layer is formed on the first silicon layer using a forming method different from the method used in forming the first silicon layer. An emitter region is then formed from impurities at the base region by performing a thermal process.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: December 16, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kye-Won Maeng, Sung-Ryoul Bae, Dong-Kyun Nam, Tae-Jin Kim
  • Patent number: 7420207
    Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: September 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Jin Kim, Kwang-Joon Yoon, Phil-Jae Chang, Kye-Won Maeng, Young-Jun Park
  • Patent number: 7135349
    Abstract: Photodiodes and methods of fabricating photodiodes are provided. For example, a method of fabricating a photodiode includes forming a buried layer of a first conductive type on a semiconductor substrate and forming a first intrinsic capping epitaxial layer on the buried layer. A first intrinsic epitaxial layer of the first conductive type is formed on the first intrinsic capping epitaxial layer. A first junction region of the first conductive type is formed in the first intrinsic epitaxial layer. A second intrinsic epitaxial layer of the second conductive type is formed on the first junction region and the first intrinsic epitaxial layer. A second intrinsic capping epitaxial layer is formed on the second intrinsic epitaxial layer. A second junction region of the first conductive type is formed such that the second junction region passes through the second intrinsic capping epitaxial layer and the second intrinsic epitaxial layer. The second junction region contacts the first junction region.
    Type: Grant
    Filed: October 22, 2004
    Date of Patent: November 14, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kye-Won Maeng, Sung-Ryoul Bae
  • Publication number: 20060252214
    Abstract: There is provided a bipolar transistor (with a respective fabrication method) that provides superior noise characteristics and gain diffusion. The fabricating method includes forming a first base region at a collector region, which in turn is formed on a substrate. A first silicon layer is formed on the base region, and a second silicon layer is formed on the first silicon layer using a forming method different from the method used in forming the first silicon layer. An emitter region is then formed from impurities at the base region by performing a thermal process.
    Type: Application
    Filed: April 27, 2006
    Publication date: November 9, 2006
    Inventors: Kye-Won Maeng, Sung-Ryoul Bae, Dong-Kyun Nam, Tae-Jin Kim
  • Publication number: 20060138580
    Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 29, 2006
    Inventors: Tae-Jin Kim, Kwang-Joon Yoon, Phil-Jae Chang, Kye-Won Maeng, Young-Jun Park
  • Publication number: 20050263840
    Abstract: A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second conductivity type which is formed using a solid state diffusion process from a surface region to an internal region of the epitaxial layer of second conductivity type, and a silicon oxide film pattern and a silicon nitride film pattern which are sequentially formed on the shallow junction layer.
    Type: Application
    Filed: April 1, 2005
    Publication date: December 1, 2005
    Inventors: Kye-won Maeng, Sung-ryoul Bae
  • Publication number: 20050118743
    Abstract: Photodiodes and methods of fabricating photodiodes are provided. For example, a method of fabricating a photodiode includes forming a buried layer of a first conductive type on a semiconductor substrate and forming a first intrinsic capping epitaxial layer on the buried layer. A first intrinsic epitaxial layer of the first conductive type is formed on the first intrinsic capping epitaxial layer. A first junction region of the first conductive type is formed in the first intrinsic epitaxial layer. A second intrinsic epitaxial layer of the second conductive type is formed on the first junction region and the first intrinsic epitaxial layer. A second intrinsic capping epitaxial layer is formed on the second intrinsic epitaxial layer. A second junction region of the first conductive type is formed such that the second junction region passes through the second intrinsic capping epitaxial layer and the second intrinsic epitaxial layer. The second junction region contacts the first junction region.
    Type: Application
    Filed: October 22, 2004
    Publication date: June 2, 2005
    Inventors: Kye-Won Maeng, Sung-Ryoul Bae