Abstract: An insulating tape for use in LOC (lead-on-chip) type semiconductor chip packages. With a tripartite structure in which two adhesive layers are provided to both surfaces of a base film, the insulating tape ranges, in coefficient of thermal expansion, from 16.0 to 23.5 ppm/° C. and is very useful in improving the reliability of LOC semiconductor chip packages having lead frames.

Abstract: A method for preparing polyamic acid and polyimide of three-dimensional molecular structure such that these polymers are superior in adhesive strength and high-temperature stability while maintaining their inherent thermal resistance and mechanical properties, and thus can be effectively used as an adhesive material for high temperature adhesive tapes suitable for semiconductor assembly.

Abstract: An adhesive tape which can bond electronic parts at the environs of a lead frame, such as leads, diepads and radiant plate semiconductor chips, to each other and is superior in adhesiveness, thermal resistance and electrical properties. The adhesive tape is produced by coating on one side or both sides of a thermal resistant film an adhesive composition including an acryl resin, a mixed epoxy resin of a bisphenol A-type epoxy resin and a cresol novolak epoxy or a phenol novolak epoxy resin, a maleimide compound containing at least two intramolecular maleimide groups, an aromatic diamine compound, an epoxy-containing liquid silicon resin and an organic or inorganic filler and drying it.

Abstract: A polymide useful as an adhesive for semiconductor assemblies having excellent thermal resistance and adhesive strength at high temperatures.

Abstract: A method for preparing polyamic acid and polyimide, which is suitable for use in adhesives or adhesive tapes for electronic parts. The polymers have such three-dimensional molecular structures that a significant improvement can be brought about in solvent solubility, thermal resistance, mechanical properties, and adhesive properties onto various substrates. The polyamic acid is prepared by reacting at least one tetracarboxylic dianhydride, at least one aromatic diamine, at least one diamine with a siloxane structure, represented by the following general formula I, and at least one polyamino compound represented by the following general formula II or III. The polyamic acid is converted into polyimide through thermal or chemical imidization.

Abstract: N-vinyllactam derivatives protected at the 3-position are provided and represented by the following formula (I). These are polymerized into homo- and copolymers for use in microlithography of semiconductor manufacture. The polymers are used as a photoresist material suitable for a deep UV process so that pictures of high sensitivity and high resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in pattern formation can be accomplished through the use of the photoresist of the invention.

Abstract: N-vinyllactam derivatives protected at the 3-position are provided and represented by the following formula (I). These are polymerized into homo- and copolymers for use in microlithography of semiconductor manufacture. The polymers are used as a photoresist material suitable for a deep UV process so that pictures of high sensitivity and high resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in pattern formation can be accomplished through the use of the photoresist of the invention.