Patents by Inventor Kyeong-Joon Ahn

Kyeong-Joon Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ATOMIC LAYER DEPOSITION APPARATUS USING NEUTRAL BEAM AND METHOD OF DEPOSITING ATOMIC LAYER USING THE SAME
    Publication number: 20110162581
    Abstract: Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.
    Type: Application
    Filed: March 17, 2011
    Publication date: July 7, 2011
    Inventors: Geun-Young Yeom, Do-Haing Lee, Byoung-Jae Park, Kyeong-Joon Ahn
  • Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
    Patent number: 7919142
    Abstract: Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.
    Type: Grant
    Filed: February 7, 2006
    Date of Patent: April 5, 2011
    Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Geun-Young Yeom, Do-Haing Lee, Byoung-Jae Park, Kyeong-Joon Ahn
  • Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
    Publication number: 20060213443
    Abstract: Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.
    Type: Application
    Filed: February 7, 2006
    Publication date: September 28, 2006
    Inventors: Geun-Young Yeom, Do-Haing Lee, Byoung-Jae Park, Kyeong-Joon Ahn