Abstract: A method for fabricating a diffusion barrier metal layer of a semiconductor device for preventing a material of a metal wiring of said semiconductor device from being diffused into a silicon layer under said metal wiring is disclosed including the steps of: exposing the surface of said silicon layer to oxygen plasma, to prevent a silicide from being formed at the interface between said silicon layer and diffusion barrier metal layer; forming a first diffusion barrier metal layer on said silicon layer; implanting oxygen ions into said first diffusion barrier metal layer; and forming a second diffusion barrier metal layer on said first diffusion barrier metal layer.

Abstract: A method for forming tungsten (or aluminum) plugs in contact holes of an ultra highly integrated semiconductor device is disclosed. The method comprises the steps of: applying an etch process to a first insulating layer covering an active region and a field oxide film of a substrate and to a second insulating layer to form a first deep contact hole on the active region by use of a first photosensitive pattern, said first photosensitive pattern being formed on said second insulating film atop said first insulating film; depositing tungsten (or aluminum) on said active region of said first contact hole by use of a selective metal deposition reactor to form a first tungsten (or aluminum) plug filling said first contact hole completely; treating the upper surface of said first tungsten (or aluminum) plug chemically with a mixture of BCl.sub.3, Cl.sub.

Abstract: A method for forming contacts of a semiconductor device, capable of simultaneously forming metal plugs having a uniform thickness in contact holes respectively formed at P.sup.+ and N.sup.+ impurity-diffused regions of a semiconductor substrate, thereby minimizing the formation of poor contacts and simplifying the formation of contacts. The method includes the steps of forming a metal pad having a small thickness only at the N.sup.+ impurity-diffused region, where a severe eroding reaction occurs, compared to the P.sup.+ impurity-diffused region, by use of a reacting gas at a low temperature, and then depositing tungsten on all contact regions by use of reacting gases at a high temperature.

Abstract: A method for forming a metal wiring of a semiconductor device, capable of avoiding a complexity of procedural steps involved in the formation of a metal plug buried in deeper contact holes having different depths in the formation of the metal wiring buried in the contact holes.

Abstract: A method for fabricating a contact plug capable of achieving a smooth tungsten growth by implanting silicon ions in the bottom surface of a via contact hole not only to remove a polymer formed on the bottom surface of the via contact hole, but also to provide a seed layer for the tungsten growth, and capable of preventing an adverse effect on the contact resistance resulting from a formation of AlF.sub.3 due to a direct contact between Al and WF.sub.6.

Abstract: A process for fabricating a metal plug having a uniform surface capable of preventing a junction consumption reaction.

Abstract: The present invention provides a method for forming a metal contact in a semiconductor device which improves the reliability of electric wiring by forming a double thin metal layer on the contact plug metal. This method comprises the steps of: forming a first contact hole up to the upper surface of a semiconductor substrate 1; filling a tungsten 5 in the first contact hole; depositing a first thin metal film 6 and a second thin metal film 7 on the entire structure sequentially; applying a photoresist 8 on the second thin metal film 7; forming a pattern for a second contact hole; forming the second contact hole by etching the second thin metal film 7, the first thin metal film 6 and the insulation layer 4 sequentially by using a photoresist 8 as an etch barrier; stripping the photoresist 8 and etching the second thin metal film 7; and depositing an aluminum alloy 9 on the entire structure.