Patents by Inventor Kyeong Kook Kim

Kyeong Kook Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor
    Patent number: 6358378
    Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: March 19, 2002
    Assignee: Korea Institute of Science and Technology
    Inventors: Won Kook Choi, Hyung Jin Jung, Kyeong Kook Kim, Young Soo Yoon, Jong Han Song
  • Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor
    Publication number: 20010017257
    Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
    Type: Application
    Filed: January 24, 2001
    Publication date: August 30, 2001
    Applicant: Korea Institute of Science and Technology
    Inventors: Won Kook Choi, Hyung Jin Jung, Kyeong Kook Kim, Young Soo Yoon, Jong Han Song