Patents by Inventor Kyeong Seok Lee

Kyeong Seok Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180038003
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Application
    Filed: May 30, 2017
    Publication date: February 8, 2018
    Inventors: Wook Seong LEE, Young-Jin KO, Young Joon BAIK, Jong-Keuk PARK, Kyeong Seok LEE, Inho KIM, Doo Seok JEONG
  • Patent number: 9726788
    Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: August 8, 2017
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee, Wook Seong Lee, Doo Seok Jeong, Inho Kim
  • Patent number: 9482798
    Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: November 1, 2016
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee, Wook Seong Lee, Doo Seok Jeong, Inho Kim
  • Patent number: 9285534
    Abstract: A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: March 15, 2016
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee, In Ho Kim
  • Publication number: 20150248865
    Abstract: A display apparatus includes a display panel comprising a plurality of data lines and a plurality of gate lines crossing the plurality of data lines, and a memory configured to store a plurality of gamma voltage data respectively corresponding to a plurality of partial areas of the display panel, the plurality of gamma voltage data for compensating a gamma difference between the partial areas of the display panel. The display apparatus further includes a timing controller configured to read, from the memory, the plurality of gamma voltage data respectively corresponding to the plurality of partial areas, and a plurality of data driver circuits configured to generate, based on the plurality of gamma voltage data, a plurality of grayscale voltages to be applied to the plurality of data lines in the plurality of partial areas.
    Type: Application
    Filed: July 7, 2014
    Publication date: September 3, 2015
    Inventors: Han-Byul LIM, Hye-Na KANG, Kyu-Min KWON, Min-Hyoung KIM, Kyeong-Seok LEE, Dae-Ho HWANG, Jun-Hyuck HWANG
  • Publication number: 20150146180
    Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.
    Type: Application
    Filed: April 15, 2014
    Publication date: May 28, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok LEE, Won Mok KIM, Taek Sung LEE, Wook Seong LEE, Doo Seok JEONG, Inho KIM
  • Publication number: 20150116856
    Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.
    Type: Application
    Filed: March 19, 2014
    Publication date: April 30, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok LEE, Won Mok KIM, Taek Sung LEE, Wook Seong LEE, Doo Seok JEONG, Inho KIM
  • Patent number: 8785230
    Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: July 22, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Taek Sung Lee, Kyeong Seok Lee, In Ho Kim, Wook Seong Lee, Doo Seok Jeong, Won Mok Kim, Byung Ki Cheong
  • Patent number: 8786859
    Abstract: Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: July 22, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee, Byung Ki Cheong
  • Patent number: 8758985
    Abstract: Provided are a method of fabricating a nanostructure array and a device including the nanostructure array. Nanoscale patterning is caused at an interface of a resist layer by light passed through a focusing layer. By such nanoscale patterning, a nanostructure array is fabricated on a substrate in various ways. As the focusing layer, an array of beads or lenses is used, and a pattern of the resist layer may include a nanoscale pore-opening and an undercut structure connected to a lower portion of the opening. The method facilitates adjustment of the size and shape of nanostructures and the interval between the nanostructures. Also, performance of the device including the nanostructure array can be improved. In particular, the method and device result in a sensor having improved sensitivity and reliability optimized for an environment and purpose to be used.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: June 24, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, In Ho Kim
  • Publication number: 20130120752
    Abstract: A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.
    Type: Application
    Filed: January 25, 2012
    Publication date: May 16, 2013
    Inventors: Kyeong Seok LEE, Won Mok Kim, Taek Sung Lee, In Ho Kim
  • Patent number: 8298495
    Abstract: The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: October 30, 2012
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee
  • Publication number: 20120258289
    Abstract: Provided are a method of fabricating a nanostructure array and a device including the nanostructure array. Nanoscale patterning is caused at an interface of a resist layer by light passed through a focusing layer. By such nanoscale patterning, a nanostructure array is fabricated on a substrate in various ways. As the focusing layer, an array of beads or lenses is used, and a pattern of the resist layer may include a nanoscale pore-opening and an undercut structure connected to a lower portion of the opening. The method facilitates adjustment of the size and shape of nanostructures and the interval between the nanostructures. Also, performance of the device including the nanostructure array can be improved. In particular, the method and device result in a sensor having improved sensitivity and reliability optimized for an environment and purpose to be used.
    Type: Application
    Filed: August 5, 2011
    Publication date: October 11, 2012
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok LEE, Won Mok KIM, In Ho KIM
  • Patent number: 8247031
    Abstract: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: August 21, 2012
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Won Mok Kim, Kyeong Seok Lee, Jong-Keuk Park, Jeung-hyun Jeong, Suyoun Lee, Taek Sung Lee
  • Publication number: 20120105857
    Abstract: The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.
    Type: Application
    Filed: December 22, 2011
    Publication date: May 3, 2012
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee
  • Patent number: 7851828
    Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: December 14, 2010
    Assignees: Korea Institute of Science and Technology, Seoul National University Industry Foundation
    Inventors: Byung-ki Cheong, Jeung-hyun Jeong, Dae-Hwan Kang, Taek Sung Lee, In Ho Kim, Kyeong Seok Lee, Won Mok Kim, Dong-Ho Ahn, Ki-Bum Kim
  • Patent number: 7758941
    Abstract: An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: July 20, 2010
    Assignee: Korea Institute of Science and Technology
    Inventors: Byung-Ki Cheong, Hyun-Suk Lee, Taek-Sung Lee, Won-Mok Kim, Kyeong-Seok Lee, Jae-Won Lee, Sung-Ho Cho
  • Publication number: 20100128273
    Abstract: Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.
    Type: Application
    Filed: August 3, 2009
    Publication date: May 27, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok LEE, Won Mok KIM, Taek Sung LEE, Byung Ki CHEONG
  • Publication number: 20090324824
    Abstract: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.
    Type: Application
    Filed: April 2, 2009
    Publication date: December 31, 2009
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Won Mok KIM, Kyeong Seok LEE, Jong-Keuk PARK, Jeung-hyun JEONG, Suyoun LEE, Taek Sung LEE
  • Patent number: 7632456
    Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: December 15, 2009
    Assignee: Korea Institute of Science and Technology
    Inventors: Byung-ki Cheong, Jeung-hyun Jeong, Dae-Hwan Kang, Han Ju Jung, Taek Sung Lee, In Ho Kim, Won Mok Kim, Kyeong Seok Lee