Patents by Inventor Kyeongeun Ko

Kyeongeun Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to calibrate, predict, and control stochastic defects in EUV lithography
    Patent number: 12579631
    Abstract: An initial probability of occurrence of a stochastic defect over an inspection area of a workpiece is received. All locations of the stochastic defects are sorted by the initial probability of occurrence. A cumulative expected defect count is determined and the cumulative expected defect count is normalized to be a fraction of a total expected defect count. A number of defect locations is determined to capture potential stochastic defects above a threshold of total stochastic defects.
    Type: Grant
    Filed: September 24, 2024
    Date of Patent: March 17, 2026
    Assignee: KLA Corporation
    Inventors: Pradeep Vukkadala, Cao Zhang, Anatoly Burov, Guy Parsey, Kyeongeun Ko, Sergei G. Bakarian, Janez Krek, Kunlun Bai, Craig Higgins, John S. Graves, Mark D. Smith, John J. Biafore
  • Method to calibrate, predict, and control stochastic defects in EUV lithography
    Patent number: 12561790
    Abstract: Using an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, one or more defects within the inspection area are imaged using an optical tool or an electron beam tool. A probability of occurrence of a stochastic defect at each of the defect locations is generated using the model. The defect locations are grouped into probability bins. A consistency between the initial probability and observed results is determined and the model can be tuned based on the consistency.
    Type: Grant
    Filed: September 24, 2024
    Date of Patent: February 24, 2026
    Assignee: KLA Corporation
    Inventors: Pradeep Vukkadala, Cao Zhang, Anatoly Burov, Guy Parsey, Kyeongeun Ko, Sergei G. Bakarian, Janez Krek, Kunlun Bai, Craig Higgins, John S. Graves, Mark D. Smith, John J. Biafore
  • Method to calibrate, predict, and control stochastic defects in EUV lithography
    Patent number: 12561791
    Abstract: Based on an initial probability of occurrence of a stochastic defect over a layout of a workpiece, a subset of locations on the workpiece are selected where the initial probability is above a threshold. The subset of locations are grouped by pattern shapes. An expected defect count is determined for each of the pattern shapes. A subset of the pattern shapes is then selected for repair.
    Type: Grant
    Filed: September 24, 2024
    Date of Patent: February 24, 2026
    Assignee: KLA Corporation
    Inventors: Pradeep Vukkadala, Cao Zhang, Anatoly Burov, Guy Parsey, Kyeongeun Ko, Sergei G. Bakarian, Janez Krek, Kunlun Bai, Craig Higgins, John S. Graves, Mark D. Smith, John J. Biafore
  • METHOD TO CALIBRATE, PREDICT, AND CONTROL STOCHASTIC DEFECTS IN EUV LITHOGRAPHY
    Publication number: 20250104214
    Abstract: Using an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, one or more defects within the inspection area are imaged using an optical tool or an electron beam tool. A probability of occurrence of a stochastic defect at each of the defect locations is generated using the model. The defect locations are grouped into probability bins. A consistency between the initial probability and observed results is determined and the model can be tuned based on the consistency.
    Type: Application
    Filed: September 24, 2024
    Publication date: March 27, 2025
    Inventors: Pradeep Vukkadala, Cao Zhang, Anatoly Burov, Guy Parsey, Kyeongeun Ko, Sergei G. Bakarian, Janez Krek, Kunlun Bai, Craig Higgins, John S. Graves, Mark D. Smith, John J. Biafore
  • METHOD TO CALIBRATE, PREDICT, AND CONTROL STOCHASTIC DEFECTS IN EUV LITHOGRAPHY
    Publication number: 20250104215
    Abstract: An initial probability of occurrence of a stochastic defect over an inspection area of a workpiece is received. All locations of the stochastic defects are sorted by the initial probability of occurrence. A cumulative expected defect count is determined and the cumulative expected defect count is normalized to be a fraction of a total expected defect count. A number of defect locations is determined to capture potential stochastic defects above a threshold of total stochastic defects.
    Type: Application
    Filed: September 24, 2024
    Publication date: March 27, 2025
    Inventors: Pradeep Vukkadala, Cao Zhang, Anatoly Burov, Guy Parsey, Kyeongeun Ko, Sergei G. Bakarian, Janez Krek, Kunlun Bai, Craig Higgins, John S. Graves, Mark D. Smith, John J. Biafore
  • METHOD TO CALIBRATE, PREDICT, AND CONTROL STOCHASTIC DEFECTS IN EUV LITHOGRAPHY
    Publication number: 20250104216
    Abstract: Based on an initial probability of occurrence of a stochastic defect over a layout of a workpiece, a subset of locations on the workpiece are selected where the initial probability is above a threshold. The subset of locations are grouped by pattern shapes. An expected defect count is determined for each of the pattern shapes. A subset of the pattern shapes is then selected for repair.
    Type: Application
    Filed: September 24, 2024
    Publication date: March 27, 2025
    Inventors: Pradeep Vukkadala, Cao Zhang, Anatoly Burov, Guy Parsey, Kyeongeun Ko, Sergei G. Bakarian, Janez Krek, Kunlun Bai, Craig Higgins, John S. Graves, Mark D. Smith, John Biafore