Abstract: A semiconductor memory device is provided that includes: a substrate extending in each of a first direction and a second direction that intersect each other; and storage patterns disposed on the substrate, and spaced apart from each other in each of the first and second directions. Each of the storage patterns extends in a third direction intersecting a plane defined by the first and second directions, and comprises a face in contact with a respective one from among storage contacts. The face of each of the storage patterns has a first width along the first direction and a second width along the second direction. The first width of the face of the storage patterns increases in a relative manner to each other in the first direction, while spacings in the first direction between adjacent ones of the storage patterns decrease in a relative manner to each other in the first direction.