Abstract: A method for manufacturing a lightweight cowl crossbar includes: producing an inner pipe, laminating a plurality of composite material layers wound around the inner pipe, and extruding an outer pipe on the winding layer, in which the plurality of composite material layers adjacent to each other are wound in different directions.

Abstract: The present invention relates to an organic compound represented by the following [Formula 1], and a high-efficiency and long-lifetime organic light emitting device enabling significantly improved low voltage driving and having long lifetime, excellent luminous efficiency and the like by employing the same as a light emitting layer host material in the device.

Abstract: The present invention relates to an anthracene derivative compound having a characteristic structure in which an aryl group is introduced into a skeletal structure in which deuterium-substituted phenyl and anthracene are linked. In addition, the present invention relates to a high-efficiency, long-life organic light-emitting device of which the luminous efficiency and lifetime characteristics are significantly improved by employing a polycyclic compound having a characteristic structure as a dopant for a light-emitting layer while employing said compound as a host for the light-emitting layer.

Abstract: The present invention relates to an organic light-emitting device comprising, in a light-emitting layer thereof: a compound represented by [chemical formula A]; and a compound represented by any one of [chemical formula D-6] and [chemical formula D-7], wherein [chemical formula A], [chemical formula D-6], and [chemical formula D-7] are as described in the detailed description of the invention.

Abstract: The present invention relates to an organic light-emitting diode in which a light-emitting layer comprises a compound represented by [chemical formula A] as a host and comprises a compound represented by [chemical formula 3], [chemical formula 4], [chemical formula 3-1] to [chemical formula 4-3] as a dopant, wherein [chemical formula 3], [chemical formula 4], [chemical formula 3-1] to [chemical formula 4-3] are the same as those described in the detailed description of the invention.

Abstract: An apparatus and method for cleaning an oxide film using a direct current reverse polarity are provided. The apparatus for cleaning an oxide film formed on a workpiece may include a power supply configured to apply direct current power and to include a positive electrode terminal and a negative electrode terminal, the workpiece configured to be electrically connected to the negative electrode terminal to act as a negative electrode to which a current is applied, and a torch having a positive electrode, which is spaced apart from the oxide film by a predetermined distance and is electrically connected to the positive electrode terminal, the torch being installed to be movable relative to the workpiece. The oxide film formed on the workpiece may be removed by applying a reverse polarity direct current between the workpiece, serving as the negative electrode, and the positive electrode to generate an arc.

Abstract: A method of fabricating a semiconductor device is disclosed, by which thickness of a gate oxide layer can be controlled for uniformity. Embodiments include sequentially forming a pad oxide layer and a nitride layer over a semiconductor substrate having an epi-layer grown thereon, the semiconductor substrate having a backside over which a backside nitride layer and a backside oxide layer are formed, forming a trench on the semiconductor substrate, depositing an oxide layer over a front side the semiconductor substrate to fill the trench with the oxide layer, selectively etching the oxide layer, performing a chemical mechanical polishing process on the front side of the semiconductor substrate, performing a chemical mechanical polishing process on the backside of the semiconductor substrate, and forming a gate oxide layer over the semiconductor substrate.