Patents by Inventor Kyeongmi LEE

Kyeongmi LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming fine patterns
    Patent number: 10727078
    Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: July 28, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Ju Park, Kyeongmi Lee, Seungchul Kwon, Eunsung Kim, Shiyong Yi
  • Block copolymer and method of manufacturing integrated circuit device using the same
    Patent number: 10138318
    Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: November 27, 2018
    Assignees: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SAMSUNG ELECTRONICS CO., LTD
    Inventors: Seungchul Kwon, Jeongju Park, Shi-yong Yi, Eun Sung Kim, Kyeongmi Lee, Joona Bang, Sanghoon Woo
  • METHODS OF FORMING FINE PATTERNS
    Publication number: 20170213744
    Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.
    Type: Application
    Filed: December 6, 2016
    Publication date: July 27, 2017
    Inventors: JEONG JU PARK, KYEONGMI LEE, SEUNGCHUL KWON, EUNSUNG KIM, SHIYONG YI
  • BLOCK COPOLYMER AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
    Publication number: 20170107317
    Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.
    Type: Application
    Filed: August 1, 2016
    Publication date: April 20, 2017
    Applicants: Samsung Electronics Co., Ltd., Korea University Research and Business Foundation
    Inventors: SEUNGCHUL KWON, Jeongju PARK, Shi-yong YI, Eun Sung KIM, Kyeongmi LEE, Joona BANG, Sanghoon WOO