Patents by Inventor Kyle A. Picone

Kyle A. Picone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implanted vertical source-line under straight stack for FLASH EPROM
    Patent number: 7906394
    Abstract: In FLASH EPROM cells, source diffusion continuity between horizontal and vertical source lines is provided by an arsenic implant under the stack in vertical source lines.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: March 15, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: Freidoon Mehrod, Kyle A. Picone
  • Implanted vertical source-line under straight stack for flash eprom
    Patent number: 6765257
    Abstract: In FLASH EPROM cells, source diffusion continuity between horizontal and vertical source lines is provided by an arsenic implant under the stack in vertical source lines.
    Type: Grant
    Filed: July 22, 1998
    Date of Patent: July 20, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Freidoon Mehrad, Kyle A. Picone
  • Source line fabrication process for flash memory
    Patent number: 6071779
    Abstract: A method of fabricating a semiconductor device having a memory array (9) that includes a source line (24) is provided. The method of forming the source line (24) may include providing a semiconductor substrate (52) having a source region (60) separated from a drain region (62) by a channel region (64). An isolation structure (70) may be formed in the semiconductor substrate (52). The isolation structure (70) may cross the source region (60), the drain region (62), and the channel region (64) of the semiconductor substrate (52). An isolation dielectric material (78) may be formed within the isolation structure (70). A continuous stack structure (50) may be formed outwardly from the channel region (64) of the semiconductor substrate (52) and the isolation structure (70). A first photomask (100) may be formed outwardly from the continuous stack structure (50) and the semiconductor substrate (52).
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: June 6, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Freidoon Mehrad, Sarma S. Gunturi, Cetin Kaya, Kyle A. Picone