Patents by Inventor Kyle A. Spring

Kyle A. Spring has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage power schottky with aluminum barrier metal spaced from first diffused ring
    Patent number: 5859465
    Abstract: A vertical conduction Schottky device having a reverse voltage rating in excess of 400 volts uses an aluminum barrier metal in contact with an N.sup.- epitaxial silicon surface. A diffused P.sup.+ guard ring surrounds the barrier metal contact and is spaced therefrom by a small gap which is fully depleted at a low reverse voltage to connect the ring to the barrier contact under reverse voltage conditions. Lifetime killing is used for the body of the diode.
    Type: Grant
    Filed: October 15, 1996
    Date of Patent: January 12, 1999
    Assignee: International Rectifier Corporation
    Inventors: Kyle A. Spring, Perry L. Merrill
  • Radhard mosfet with thick gate oxide and deep channel region
    Patent number: 5831318
    Abstract: A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. The gate oxide thickness is increased to more than 1250 .ANG. for a device with a reverse voltage rating of 250 volts and the channel concentration is reduced to maintain a low threshold voltage. The thicker oxide prevents single event damage under reverse bias voltage.
    Type: Grant
    Filed: July 25, 1996
    Date of Patent: November 3, 1998
    Assignee: International Rectifier Corporation
    Inventors: Kyle A. Spring, Perry Merrill
  • Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
    Patent number: 5475252
    Abstract: A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. Arsenic doping is used in the early part of the process to form the source region, and diffused too slowly to be adversely affected by later thermal cycling process steps. The source region has a relatively high resistance to act as a ballasting resistor to prevent burnout of one of a large number of parallel connected cells.
    Type: Grant
    Filed: August 10, 1994
    Date of Patent: December 12, 1995
    Assignee: International Rectifier Corporation
    Inventors: Perry Merrill, Kyle A. Spring
  • Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
    Patent number: 5338693
    Abstract: A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. Arsenic doping is used in the early part of the process to form the source region, and diffused too slowly to be adversely affected by later thermal cycling process steps. The source region has a relatively high resistance to act as a ballasting resistor to prevent burnout of one of a large number of parallel connected cells.
    Type: Grant
    Filed: January 8, 1987
    Date of Patent: August 16, 1994
    Assignee: International Rectifier Corporation
    Inventors: Daniel M. Kinzer, Perry Merrill, Kyle A. Spring