Patents by Inventor Kyle Armstrong
Kyle Armstrong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948707Abstract: A system for providing cable support may be provided. The system may comprise a conductor core, a filler that may provide integral core support, and armor. The conductor core may comprise at least one conductor. The filler may be applied around at least a portion of the conductor core. The armor may be applied around at least a portion of the filler. The applied armor may be configured to cause the filler to apply a strong enough force on an exterior of the conductor core configured to keep the conductor core from slipping down an interior of the filler due to a gravitational force. In addition, the applied armor may be configured to cause the filler to apply a strong enough force on an interior of the armor configured to keep a combination of the conductor core and the filler from slipping down the interior of the armor due to the gravitational force.Type: GrantFiled: May 23, 2016Date of Patent: April 2, 2024Assignee: Southwire Company, LLCInventors: Kyle Douglas McGovern, Richard M. Temblador, David Mercier, John Armstrong, Paul H. White, Randy D. Kummer
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Publication number: 20210103808Abstract: Automatically triaging network events such as data loss prevention (DLP) incidents is disclosed. A system can automatically triage or classify an incident using a prediction model. The prediction model can determine the classification based on similar incidents that were previously classified. Similar incidents are those incidents having profiles that match a profile of the incident. The profile can include one or more attributes that are representative of an incident. The system can arrive at a specific classification for the incident based on a classification of the similar incidents if the similar incidents satisfy one or more conditions.Type: ApplicationFiled: October 8, 2019Publication date: April 8, 2021Inventors: Kyle ARMSTRONG, Skyler BUTLER
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Patent number: 10217706Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: GrantFiled: August 24, 2017Date of Patent: February 26, 2019Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Publication number: 20170352616Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: ApplicationFiled: August 24, 2017Publication date: December 7, 2017Applicant: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 9780029Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: GrantFiled: April 29, 2015Date of Patent: October 3, 2017Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 9358753Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: GrantFiled: July 1, 2015Date of Patent: June 7, 2016Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Publication number: 20150321447Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: ApplicationFiled: July 1, 2015Publication date: November 12, 2015Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Publication number: 20150235938Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: ApplicationFiled: April 29, 2015Publication date: August 20, 2015Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 9102121Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: GrantFiled: May 3, 2012Date of Patent: August 11, 2015Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Patent number: 9048292Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: GrantFiled: October 25, 2012Date of Patent: June 2, 2015Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Patent number: 8969214Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.Type: GrantFiled: May 14, 2013Date of Patent: March 3, 2015Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Kyle Armstrong, Michael D. Hyatt, Vishal Sipani
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Publication number: 20140342563Abstract: A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.Type: ApplicationFiled: May 14, 2013Publication date: November 20, 2014Applicant: Micron Technology, Inc.Inventors: Scott L. Light, Kyle Armstrong, Michael D. Hyatt, Vishal Sipani
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Publication number: 20140117529Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.Type: ApplicationFiled: October 25, 2012Publication date: May 1, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
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Publication number: 20130295335Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.Type: ApplicationFiled: May 3, 2012Publication date: November 7, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
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Patent number: 8455341Abstract: Methods of forming features such as word lines of memory circuitry are disclosed. One such method includes forming an initial pitch multiplied feature pattern extending from a target area into only one of a first or second periphery area received on opposing sides of the target area. Thereafter, a subsequent feature pattern is formed which extends from the target array area into the other of the first or second periphery area. The initial and subsequent feature patterns may be used in forming features in an underlying material which extend from the target area to the first and second periphery areas. Other embodiments are disclosed.Type: GrantFiled: September 2, 2010Date of Patent: June 4, 2013Assignee: Micron Technology, Inc.Inventors: Stephen W. Russell, Kyle A. Armstrong
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Publication number: 20120058633Abstract: Methods of forming features such as word lines of memory circuitry are disclosed. One such method includes forming an initial pitch multiplied feature pattern extending from a target area into only one of a first or second periphery area received on opposing sides of the target area. Thereafter, a subsequent feature pattern is formed which extends from the target array area into the other of the first or second periphery area. The initial and subsequent feature patterns may be used in forming features in an underlying material which extend from the target area to the first and second periphery areas. Other embodiments are disclosed.Type: ApplicationFiled: September 2, 2010Publication date: March 8, 2012Inventors: Stephen W. Russell, Kyle A. Armstrong
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Publication number: 20110129991Abstract: Some embodiments include methods of patterning materials. A mass may be formed over a material, and a first mask may be formed over the mass. First spacers may be formed along features of the first mask, and then the first mask may be removed to leave a second mask corresponding to the first spacers. A pattern of the second mask may be partially transferred into the mass to form an upper portion of the mass into a third mask. The first spacers may be removed from over the third mask, and then second spacers be formed along features of the third mask. The second spacers are a fourth mask. A pattern of the fourth mask may be transferred into a bottom portion of the mass, and then the bottom portion may be used as a mask during processing of the underlying material.Type: ApplicationFiled: December 2, 2009Publication date: June 2, 2011Inventors: Kyle Armstrong, David A. Kewley, Duane Goodner, Mark Kiehlbauch, Zengtao Liu
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Patent number: 5986576Abstract: A remote control portable traffic signaling device (10) and system (94) for controlling a flow of traffic. The remote control portable traffic signaling system (94) includes the portable signaling device (10) and a plurality of warning flashers (76). The portable signaling device (10) includes a remote control unit (42) and a signal head (11) having an LED display device (50) and a microprocessor (46). The remote control unit (42) transmits a control signal to be received by the microprocessor (46) for use in controlling a message communicated by the LED display device (50). A base unit (30) including a storage compartment for housing the power source (36) is connected to the signal head (11) for supplying power to the microprocessor (46) and LED display device (50) via a connection wire (38) extending through a pole (24) positioned therebetween.Type: GrantFiled: January 21, 1998Date of Patent: November 16, 1999Inventor: Sheldyn Kyle Armstrong