Abstract: Systems, methods and/or techniques for processing solderbrace using one or more light wavelength filters are described. A method of processing solderbrace material may include applying solderbrace material to a wafer, placing a light wavelength filter between the solderbrace material and a broadband light source and exposing the light wavelength filter to broadband light from the broadband light source. The light wavelength filter may block some wavelengths of light and may allow other wavelengths of light to pass through and strike the solderbrace material. In some embodiments, the light wavelength filter may be an I-Line filter that is adapted to block substantially all wavelengths of light and allow passage of I-Line wavelengths of light. In some embodiments, the light wavelength filter may be an I-Line filter that is adapted to block substantially all G-Line and H-Line wavelengths of light and allow passage of substantially all I-Line wavelengths of light.

Abstract: Divots (35, 36) may particularly be a problem for isolation trenches (22, 24) that are shallow. These divots (35, 36) may have a negative impact on the performance of the integrated circuit (49). Densification heating may be used to reduce the size and/or depth of these divots (35, 36) during manufacturing. For example, densification heating may be done at a temperature of at least 1100 degrees Celsius for at least 10 minutes after filling the isolation trenches (22, 24) with dielectric material (30). This densification heating may improve the variation in threshold voltages of transistors (e.g. 48) on an integrated circuit (49), particularly SOI (silicon on insulator) devices. SRAM cells (50) in particular may benefit from this densification heating.