Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure.

Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure.

Abstract: Aspects of features in thermally conductive substrates and methods of forming the same are described. A substrate may comprise a material having an average value of thermal conductivity equal to or greater than about 1,000 W/mK. The substrate may comprise diamond. The substrate may comprise a wide-bandgap semiconductor material. A feature may comprise an interconnect, such as a via hole. A feature may comprise a singulation feature, such as a die street. The substrate may comprise a plurality of crystals each having an average crystal grain diameter from about 10 nanometers to about 100 nanometers. The plurality of crystals may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature. The substrate may comprise a keyhole or void. The keyhole may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature.