Abstract: A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.

Abstract: A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.

Abstract: The present invention provides a method for analyzing critical defects in analog integrated circuits. The method for analyzing critical defects, among other possible steps, may include fault testing a power field effect transistor (120) portion of an analog integrated circuit (115) to obtain electrical failure data. The method may further include performing an in-line optical inspection of the analog integrated circuit (115) to obtain physical defect data, and correlating the electrical failure data and physical defect data to analyze critical defects.

Abstract: A laser alignment structure and method for fabrication such a structure is provided. Preferably, the same material is used throughout the alignment structure. Contrast between different areas of the alignment structure is achieved by providing areas in the structure which are relatively flat and other areas which are not relatively flat having varying topographical features. The relatively flat areas reflect impinging laser energy substantially back in the direction from which it came (e.g., in a direction substantially perpendicular to a plane defined by the surface of the structure). The relatively non-flat areas reflect relatively little, if any, laser energy in the direction from which it came. Thus, although the entire surface of the alignment structure may be reflective of laser energy, the surface topology changes from one area to another thereby effectively changing the direction of the reflected laser energy.