Abstract: An adjustable wheel mobility vehicle can have a support structure for supporting a rider, a modular conveying feature with a wheel, and an attachment that physically and tightly secures the modular conveying feature to the support structure in at least two different positions. A tool-free mechanism can allow a user to free the modular conveying feature from the support structure for movement to another position. A system for adjusting a skateboard wheel position can include a wheel support structure having multiple wheel attachment positions, and a wheel assembly comprising a skateboard wheel and a base. The wheel can swivel with respect to the base and the base can join to the wheel support structure. The base and wheel support structure can tightly join to prevent rotation of the base with respect to the wheel support structure and that tightly retain the base in a first attachment position. A release feature can allow a user to easily loosen the base and reposition it in a second attachment position.

Abstract: An adjustable wheel mobility vehicle can have a support structure for supporting a rider, a modular conveying feature with a wheel, and an attachment that physically and tightly secures the modular conveying feature to the support structure in at least two different positions. A tool-free mechanism can allow a user to free the modular conveying feature from the support structure for movement to another position. A system for adjusting a skateboard wheel position can include a wheel support structure having multiple wheel attachment positions, and a wheel assembly comprising a skateboard wheel and a base. The wheel can swivel with respect to the base and the base can join to the wheel support structure. The base and wheel support structure can tightly join to prevent rotation of the base with respect to the wheel support structure and that tightly retain the base in a first attachment position. A release feature can allow a user to easily loosen the base and reposition it in a second attachment position.

Abstract: The present disclosure relates to curable silicone elastomer compositions having enhanced adhesive properties with respect to a wide variety of substrates (hereafter referred to as “curable silicone elastomer compositions”). Elastomers made by curing the curable silicone elastomer compositions may be adhered to a wide variety of substrates to form composites comprising the elastomers and the substrates. Processes for adhering the elastomers made by curing the curable silicone elastomer compositions to the substrates are also provided. An adhesion promoter, component (D), is provided to enhance adhesion. Component (D) is a polyorganosiloxane having (i) at least one unsaturated group per molecule selected from alkenyl groups and alkynyl groups and (ii) an anhydride functionality and an aromatic functionality, wherein a carbon of the aromatic functionality is separated from a carbon of a carbonyl group of the anhydride by a carbon chain of from 1 to 3 non-aromatic carbon atoms inclusive.

Abstract: A composition contains filler particles dispersed in a matrix material, wherein the matrix material includes: (a) a first polyorganosiloxane that comprises an average of 2 or more succinic anhydride groups per molecule; and (b) a second polyorganosiloxane other than the first polyorganosiloxane; wherein the filler particles are present at a concentration in a range of 15 to 80 volume-percent based on composition volume and wherein the first polyorganosiloxane is present at a concentration sufficient to provide succinic anhydride groups at a concentration of 0.30 to 200 micromoles per gram of matrix material.

Abstract: A composition contains: (a) a first polyorganosiloxane; (b) 50-80 volume percent, based on composition volume, of conductive fillers; and (c) 0.1 to 2.0 weight-percent, based on composition weight, of a second polyorganosiloxane different from the first polyorganosiloxane, the second polyorganosiloxane having an average of 0.5 to 1.5 anhydride groups per molecule.

Abstract: An adjustable wheel mobility vehicle can have a support structure for supporting a rider, a modular conveying feature with a wheel, and an attachment that physically and tightly secures the modular conveying feature to the support structure in at least two different positions. A tool-free mechanism can allow a user to free the modular conveying feature from the support structure for movement to another position. A system for adjusting a skateboard wheel position can include a wheel support structure having multiple wheel attachment positions, and a wheel assembly comprising a skateboard wheel and a base. The wheel can swivel with respect to the base and the base can join to the wheel support structure. The base and wheel support structure can tightly join to prevent rotation of the base with respect to the wheel support structure and that tightly retain the base in a first attachment position. A release feature can allow a user to easily loosen the base and reposition it in a second attachment position.

Abstract: A curable composition is disclosed. The curable composition comprises (I) an epoxide-functional silicone-acrylate polymer, (II) an aminosiloxane, and (III) a conductive filler. The epoxide-functional silicone-acrylate polymer comprises acrylate-derived monomeric units comprising siloxane moieties, epoxide-functional moieties, and optionally, hydrocarbyl moieties, and the aminosiloxane comprises an average of at least two amine functional groups per molecule. Methods of preparing the curable composition, and a cured product thereof, are also disclosed. A method of forming a composite article comprising a conductive layer with the curable composition is disclosed is also disclosed. The method comprises disposing the curable composition on a substrate, and curing the curable composition to give a conductive layer on the substrate, thereby forming the composite article.

Abstract: A caster board can include a front platform section connected by a torsion bar or other neck portion to a rear platform section. The caster board can be convertible between a first configuration in which the caster board has three wheels, and a second configuration in which the caster board has two wheels. In the first configuration, the rear platform section can be supported by two wheels laterally offset from a longitudinal axis of the caster board. In the second configuration, the rear platform section can be supported by one wheel aligned with a longitudinal axis of the caster board. The rear platform section can include at least three mounting locations configured to have caster assemblies installed therein.

Abstract: Employing non-energetic MCPs as hosts (fuel) for the adsorption of oxidant molecules enables the intimate and molecular scale mixing of fuel and oxidizer on a level that is not commonly achievable in traditional energetic mixtures. The adsorption of the oxidants into MOF-5 resulted in increased heat released upon decomposition, which shows potential for utilization of this method as a platform to develop high-performance primary energetic materials.

Abstract: Employing non-energetic MCPs as hosts (fuel) for the adsorption of oxidant molecules enables the intimate and molecular scale mixing of fuel and oxidizer on a level that is not commonly achievable in traditional energetic mixtures. The adsorption of the oxidants into MOF-5 resulted in increased heat released upon decomposition, which shows potential for utilization of this method as a platform to develop high-performance primary energetic materials.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.

Abstract: A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.