Abstract: A method of fabricating an integrated circuit (IC) includes depositing an aluminum-containing metal interconnect layer at a first temperature over a semiconductor device having a plurality of transistors. The metal interconnect layer is annealed at a maximum annealing temperature that is less than the first temperature. The metal interconnect layer is patterned after the annealing, thereby interconnecting the transistors.

Abstract: A method of fabricating an integrated circuit (IC) includes depositing an aluminum-containing metal interconnect layer at a first temperature over a semiconductor device having a plurality of transistors. The metal interconnect layer is annealed at a maximum annealing temperature that is less than the first temperature. The metal interconnect layer is patterned after the annealing, thereby interconnecting the transistors.

Abstract: A method of fabricating an integrated circuit (IC) includes forming a metal interconnect stack on substrate that includes a plurality of product die each having a plurality of transistors connected together to implement a circuit function. The forming the metal interconnect stack includes depositing a metal interconnect layer comprising aluminum on a barrier layer at a first temperature. After depositing the metal interconnect layer, the metal interconnect stack is annealed in a non-oxidizing ambient at a maximum annealing temperature that is<the first temperature. After the annealing, a pattern is formed on the metal interconnect layer, and at least the metal interconnect layer is etched.