Abstract: A system for providing guideline concordance may include at least one processing device programmed to receive, via a graphical user interface of a user device, a search term associated with a drug; access a structured database to identify, based on the search term, a description of at least one regimen that includes the search term; display, via the graphical user interface, a selectable identifier of the at least one regimen; receive, via the graphical user interface, a selection of a regimen, wherein the regimen is associated with the drug; generate, based on the structured database, one or more indications that are concordant for the regimen; receive, via the graphical user interface, a selection of a concordant indication; and store, in an electronic health record database, a patient record with information identifying the selected regimen and the selected indication.

Abstract: Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (CMP) process at the select regions, and removing material from the dielectric material using the CMP process. In another embodiment, a method of manufacturing a semiconductor device includes increasing content of at least one of boron, phosphorus, or hydrogen in at least select regions of a dielectric material thereby increasing the material removal rate of a CMP process at the select regions, and removing material from the dielectric material using the CMP process.

Abstract: Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (CMP) process at the select regions, and removing material from the dielectric material using the CMP process. In another embodiment, a method of manufacturing a semiconductor device includes increasing content of at least one of boron, phosphorus, or hydrogen in at least select regions of a dielectric material thereby increasing the material removal rate of a CMP process at the select regions, and removing material from the dielectric material using the CMP process.