Patents by Inventor Kyle Terril

Kyle Terril has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned trench MOSFET and method of manufacture
    Patent number: 9947770
    Abstract: A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region.
    Type: Grant
    Filed: January 17, 2008
    Date of Patent: April 17, 2018
    Assignee: Vishay-Siliconix
    Inventors: Jian Li, Kuo-In Chen, Kyle Terril
  • Self-aligned trench MOSFET and method of manufacture
    Patent number: 9761696
    Abstract: A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: September 12, 2017
    Assignee: Vishay-Siliconix
    Inventors: Jian Li, Kuo-In Chen, Kyle Terril
  • Self-Aligned Trench MOSFET and Method of Manufacture
    Publication number: 20140206165
    Abstract: A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region.
    Type: Application
    Filed: March 20, 2014
    Publication date: July 24, 2014
    Applicant: VISHAY-SILICONIX
    Inventors: Jian Li, Kuo-In Chen, Kyle Terril
  • Self-Aligned Trench MOSFET and Method of Manufacture
    Publication number: 20080246081
    Abstract: A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region.
    Type: Application
    Filed: January 17, 2008
    Publication date: October 9, 2008
    Applicant: VISHAY-SILICONIX
    Inventors: Jian Li, Kuo-In Chen, Kyle Terril