Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Abstract: There is provided an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes: an insulating substrate on which a plurality of barrier ribs and a plurality of grooves partitioned by the barrier ribs are formed; source and drain electrodes each formed on the grooves spaced apart from each other among the plurality of grooves; a gate electrode formed on the groove between the source and drain electrodes; an opening formed by etching the barrier ribs between the source electrode and the gate electrode and between the gate electrode and the drain electrode; a gate insulating film formed on the opening; and an organic semiconductor layer formed on the gate insulating film. The organic thin film transistor is capable of mass production and has excellent electrical characteristics.