Patents by Inventor Kyo Seop Kim

Kyo Seop Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices including data storage patterns
    Patent number: 10833124
    Abstract: A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyo Seop Kim, Chang Woo Sun, Gyu Hwan Oh, Joon Kim, Joon Youn Hwang
  • Semiconductor Devices Including Data Storage Patterns
    Publication number: 20190109175
    Abstract: A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.
    Type: Application
    Filed: April 16, 2018
    Publication date: April 11, 2019
    Inventors: Kyo Seop Kim, Chang Woo Sun, Gyu Hwan Oh, Joon Kim, Joon Youn Hwang