Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition having excellent defect suppressing properties, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition according to an embodiment of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition including a resin A having a repeating unit a1 having a group represented by any one of General Formula (1), . . . , or (6), which is a nonionic group that decomposes upon irradiation with actinic rays or radiation, and an additive B that is at least any one of an acid having an acid group having a pKa of ?3.60 or more, or a salt having a structure in which a hydrogen atom of an acid group having a pKa of ?3.60 or more is substituted with a cation.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, in Formula (1), Z represents a halogen atom, a group represented by R11OCH2—, or a group represented by R12OC(?O)CH2—. R11 and R12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Abstract: A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) which contains a repeating unit (a1) having a specific ring structure, a compound (B) which generates an acid by an irradiation with an actinic ray or a radiation, and a specific compound (C) which is decomposed by an irradiation with an actinic ray or a radiation so that an acid-trapping property is lowered; an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition; and a method for manufacturing an electronic device.

Abstract: A photosensitive composition for EUV light includes a resin X of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, and a photoacid generator; or a resin Y which includes a repeating unit having a photoacid generating group and of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, in which the photosensitive composition for EUV light satisfies both Requirement 1 and Requirement 2.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin having an acid-decomposable group whose polarity increases through decomposition by the action of an acid, an acid generator A capable of generating a first acid upon irradiation with actinic rays or radiation, and an acid generator B capable of generating a second acid upon irradiation with actinic rays or radiation, and the first acid and the second acid satisfy predetermined requirements.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a photoacid generator that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation, and (B) a resin having a repeating unit containing an acid-decomposable group, in which an Eth sensitivity of the repeating unit containing an acid-decomposable group is 5.64 or less, and which can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern; a photoacid generator; and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by General Formula (1). In General Formula (1), X represents a sulfur atom or an iodine atom. m represents 1 or 2, in a case where X is a sulfur atom, m is 2, and in a case where X is an iodine atom, m is 1. R1's each independently represent an alkyl group or alkenyl group which may include a heteroatom, an aromatic heterocyclic group, or an aromatic hydrocarbon ring group. Further, in a case where m is 2, two R1's may be bonded to each other to form a ring. R2 represents a divalent linking group. R3 represents a divalent linking group having no aromatic group. Y? represents an anionic moiety. The pKa of the compound represented by General Formula (1) as Y? is protonated is ?2.0 to 1.5.

Abstract: A method of forming a reversed pattern including: a step of forming a resist film on a substrate using a photosensitive composition having an A value of 0.14 or more, which is determined by Expression (1); a step of exposing the resist film to light; a step of developing the exposed resist film to form a resist pattern; a step of applying a pattern reversal film forming composition such that the resist pattern is coated and thereby forming a pattern reversal film; a step of performing etch-back on the pattern reversal film and exposing a surface of the resist pattern to light; and a step of removing the resist pattern to form the reversed pattern, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×0.04+[I]×39.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having an excellent pattern line width roughness (LWR). In addition, another object of the present invention is to provide: a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which uses the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by General Formula (1). In General Formula (1), X represents a sulfur atom or an iodine atom. m represents 1 or 2, in a case where X is a sulfur atom, m is 2, and in a case where X is an iodine atom, m is 1. R1's each independently represent an alkyl group or alkenyl group which may include a heteroatom, an aromatic heterocyclic group, or an aromatic hydrocarbon ring group. Further, in a case where m is 2, two R1's may be bonded to each other to form a ring. R2 represents a divalent linking group. R3 represents a divalent linking group having no aromatic group. Y? represents an anionic moiety. The pKa of the compound represented by General Formula (1) as Y? is protonated is ?2.0 to 1.5.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin having an acid-decomposable group whose polarity increases through decomposition by the action of an acid, an acid generator A capable of generating a first acid upon irradiation with actinic rays or radiation, and an acid generator B capable of generating a second acid upon irradiation with actinic rays or radiation, and the first acid and the second acid satisfy predetermined requirements.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which satisfies a relational expression represented by a specific formula in a case where an exposure latitude is represented by EL and an normalized image log slope is represented by NILS, in which the actinic ray-sensitive or radiation-sensitive resin composition can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern (for example, a contact hole pattern having a hole diameter of 45 nm or less, or a line-and-space pattern having a line width of 45 nm or less); and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a photoacid generator that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation, and (B) a resin having a repeating unit containing an acid-decomposable group, in which an Eth sensitivity of the repeating unit containing an acid-decomposable group is 5.64 or less, and which can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern; a photoacid generator; and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: There is provided a resist composition containing a resin. The resin includes a repeating unit (a) having one or more *—OY0 groups substituted for an aromatic ring; and a phenolic hydroxyl group (b) or a partial structure (c) represented by Formula (X). Here, the *—OY0 group is a group that is decomposed due to an action of an acid to generate a phenolic hydroxyl group, and Y0 is a specific protective group. In a case where the repeating unit (a) includes none of the phenolic hydroxyl group (b) and the partial structure (c), the repeating unit (a) is a repeating unit in which the *—OY0 group is decomposed due to an action of an acid to generate two or more phenolic hydroxyl groups.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (I), A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, in Formula (I), Z represents a halogen atom, a group represented by R11OCH2—, or a group represented by R12OC(?O)CH2—. R11 and R12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.