Patents by Inventor Kyohei Yamaguchi
Kyohei Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12138928Abstract: Provided is a method for manufacturing a liquid ejection head substrate and a method for manufacturing a liquid ejection head capable of reducing degradation of the quality of a printed image. To this end, in formation of a liquid ejection head substrate, a part required to have more precise relative positional relation or not required to have high fabrication precision is set as a first part, and for the first part, a single-shot exposure method is employed. Also, a part required to have higher fabrication precision is set as a second part, and for the second part, a split exposure method is employed.Type: GrantFiled: August 12, 2022Date of Patent: November 12, 2024Assignee: CANON KABUSHIKI KAISHAInventors: Seiko Minami, Hidenori Yamato, Takaaki Yamaguchi, Nobuyuki Hirayama, Kyohei Kubota, Yu Nishimura
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Publication number: 20240352910Abstract: Provided is a canister configured to adsorb and desorb an evaporated fuel originating in a fuel tank of a vehicle. The canister includes an outer case, a coupling port, an inner case, and at least one first protrusion. The outer case includes an inner surface defining an internal space extending in a first direction. The coupling port couples an inside and an outside of the outer case. The inner case is a cylindrical member accommodating therein an adsorbent for adsorbing the evaporated fuel. The at least one first protrusion protrudes outwards from an outer surface of the inner case. A fluid flows through the internal space in the first direction. The inner case is press-fitted inside the outer case so as to be accommodated in the internal space. The at least one first protrusion contacts a part of the inner surface of the outer case extending in the first direction.Type: ApplicationFiled: April 1, 2024Publication date: October 24, 2024Inventors: Kyohei Yamaguchi, Koji Iwamoto, Masaaki Kakuchi
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Publication number: 20240316529Abstract: A problem is to provide a formed adsorber having excellent adsorption and desorption performance for fuel vapor (in particular, n-butane) of a wide concentration range from a low concentration to a high concentration. A formed product including activated carbon fiber, granular activated carbon, and a binder is prepared. A weight ratio of the activated carbon fiber to the granular activated carbon is 5 to 95 parts by weight of the activated carbon fiber to 95 to 5 parts by weight of the granular activated carbon, in a total weight of the activated carbon fiber and the granular activated carbon, a content ratio of the binder in the formed adsorber is 0.3 to 20 parts by weight of the binder to 100 parts by weight of the activated carbon fiber and the granular activated carbon, the granular activated carbon has a total pore volume ranging from 0.90 to 2.50 cm3/g, and the activated carbon fiber has a total pore volume ranging from 0.50 to 1.20 cm3/g.Type: ApplicationFiled: March 20, 2024Publication date: September 26, 2024Applicants: NIPPON PAPER INDUSTRIES CO., LTD., FUTABA INDUSTRIAL CO., LTD.Inventors: Yoshihide Watanabe, Dongyeon Ryu, Minoru Yada, Takuya Nakagawa, Shogo Minezawa, Masahito Hosoi, Koji Iwamoto, Kyohei Yamaguchi, Tamami Ina
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Patent number: 12040348Abstract: An image display element, provided with a pixel region and a connection region, includes a light-emitting unit and a driving circuit substrate. The light-emitting unit includes a semiconductor layer obtained by layering a second conductive layer, a light-emitting layer, and a first conductive layer, mesa shapes formed by dividing the semiconductor layer, and a step portion separated from the mesa shapes by a groove. A first electrode is connected to the first conductive layer and a first driving electrode. The light-emitting unit further includes, between the mesa shapes adjacent to each other, a wiring line layer forming a conductive path, the wiring line layer being thinner than a layer thickness of a portion of each of the mesa shapes in the semiconductor layer. The wiring line layer extends to a top of the step portion and is connected to a common second electrode provided on the step portion.Type: GrantFiled: November 30, 2021Date of Patent: July 16, 2024Assignee: Sharp Fukuyama Laser Co., Ltd.Inventors: Yuta Ikawa, Shinji Yamaguchi, Osamu Jinushi, Naoto Momotani, Kyohei Mikami
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Publication number: 20240222610Abstract: A hydrogen storage alloy contains Mm, Ni, Mn, Al, and Co and has a main phase having a CaCu5-type crystal structure. La and Ce together account for 95 mass % or more of Mm. When the mole ratios of Ni, Mn, Al, and Co with respect to 1 mol of Mm are represented by a, b, c, and d, respectively, d is 0.00 or more and less than 0.15, d/b is 0.00 or more and 0.35 or less, and the sum of a+b+c+d is 5.22 or more and 5.44 or less. The ratio H/E of hardness H (GPa) to composite elastic modulus E (GPa) as measured using a nanoindentation technique is 0.08 or more and 0.15 or less.Type: ApplicationFiled: June 16, 2022Publication date: July 4, 2024Inventors: Kyohei YAMAGUCHI, Hiroki SAWAMOTO, Shingo KIKUGAWA, Makoto OKUZONO, Masayasu TORIMOTO
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Publication number: 20240143465Abstract: A semiconductor device includes first and second processor cores configured to perform a lock step operation and including first and second scan chains. The semiconductor device further includes a scan test control unit that controls a scan test of the first and second processor cores using the first and second scan chains, and a start-up control unit that outputs a reset signal for bringing the first and second processor cores into a reset state. The start-up control unit outputs an initialization scan request before the start of a lock step operation, and the scan test control unit performs an initialization scan test operation on the first and second processor cores by using an initialization pattern.Type: ApplicationFiled: August 18, 2023Publication date: May 2, 2024Inventors: Kiyoshi HAYASE, Yuki HAYAKAWA, Toshiyuki KAYA, Kyohei YAMAGUCHI, Takahiro IRITA, Shinichi SHIBAHARA
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Publication number: 20230142372Abstract: An ABs-type hydrogen storage alloy is provided that has a low Co amount and uses Mm composed of La and Ce, which is capable of preventing a decrease in lifetime characteristics. The hydrogen storage alloy has an ABx composition constituted with an A-site composed of an Mm and a B-site composed of Ni, Co, Mn, and Al, or Ni, Mn, and Al, wherein Mm is composed of La and Ce; the molar ratio of Co is 0.0 or more and 0.11 or less when the molar ratio of Mm is 1.00; the ratio (Al/Mn) of the molar ratio of Al to the molar ratio of Mn is 0.35 to 1.10; and the ratio of the c-axis length to the a-axis length in the CaCu5-type crystal structure is 0.8092 or more.Type: ApplicationFiled: April 15, 2021Publication date: May 11, 2023Inventors: Keisuke MIYANOHARA, Kyohei YAMAGUCHI
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Patent number: 11422960Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.Type: GrantFiled: May 13, 2021Date of Patent: August 23, 2022Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
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Publication number: 20210263869Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.Type: ApplicationFiled: May 13, 2021Publication date: August 26, 2021Inventors: Kyohei YAMAGUCHI, Daisuke KAWAKAMI, Hiroyuki HAMASAKI
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Patent number: 11094932Abstract: A hydrogen storage alloy suitable for prescribed pretreatment, that is, pretreatment wherein mechanical pulverization is performed after pulverizing a hydrogen storage alloy and absorbing/desorbing hydrogen is provided. The hydrogen storage alloy comprises a parent phase having a CaCu5-type, that is, an AB5-type crystal structure, wherein the A site is constituted from a rare earth element containing La; and the B site does not contain Co and contains at least Ni, Al, and Mn, with the ratio (Mn/Al) of the content of Mn (molar ratio) to the content of Al (molar ratio) being 0.60 or more and less than 1.56, and the ratio (La/(Mn+Al)) of the content of La (molar ratio) to the total content of the content of Al (molar ratio) and the content of Mn (molar ratio) being more than 0.92.Type: GrantFiled: December 20, 2017Date of Patent: August 17, 2021Inventors: Keisuke Miyanohara, Kyohei Yamaguchi
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Patent number: 11047282Abstract: An exhaust gas purification device is capable of reducing the amount of NOx emissions generated at the time of cold start. An exhaust gas purification device includes a urea injection valve, a metal honeycomb, a temperature sensor, and an SCR catalyst in an exhaust passage. It is possible for an exhaust gas temperature of exhaust gas passing through the metal honeycomb to be increased by the metal honeycomb that is capable of being electrically heated by control executed by a control unit ECU. The exhaust gas temperature is detected by the temperature sensor. Based on a temperature-versus-ammonia adsorption amount profile stored in advance in a storage unit of the control unit ECU, ammonia is pre-adsorbed onto the metal honeycomb and the SCR catalyst, and the metal honeycomb is electrically heated at the time of cold start after the temperature detected by the temperature sensor becomes lower than 150° C.Type: GrantFiled: February 8, 2018Date of Patent: June 29, 2021Assignee: N.E. CHEMCAT CORPORATIONInventors: Toshinori Okajima, Makoto Nagata, Nobunori Okui, Kyohei Yamaguchi
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Patent number: 11036662Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.Type: GrantFiled: March 2, 2020Date of Patent: June 15, 2021Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
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Patent number: 10954896Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and additional activated carbon. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber directly or via an additional chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The additional activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. A ratio of a volume of the activated carbon stored in the main chamber to a volume of the activated carbon stored in the sub chamber (Vmain/Vsub) is more than 7 and equal to or less than 10.Type: GrantFiled: January 16, 2020Date of Patent: March 23, 2021Assignee: FUTABA INDUSTRIAL CO., LTD.Inventor: Kyohei Yamaguchi
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Publication number: 20200271077Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and more activated carbon. The charge port takes in evaporated fuel. The purge port discharges the evaporated fuel. The atmosphere port is open to the atmosphere. The charge port and the purge port are connected to the main chamber. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The more activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. An activated carbon volume ratio (Vmain/Vsub) is 5.5 to 7.Type: ApplicationFiled: May 13, 2020Publication date: August 27, 2020Inventors: Takuya Nakagawa, Masahito Hosoi, Kyohei Yamaguchi
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Publication number: 20200248655Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and additional activated carbon. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber directly or via an additional chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The additional activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. A ratio of a volume of the activated carbon stored in the main chamber to a volume of the activated carbon stored in the sub chamber (Vmain/Vsub) is more than 7 and equal to or less than 10.Type: ApplicationFiled: January 16, 2020Publication date: August 6, 2020Inventor: Kyohei Yamaguchi
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Publication number: 20200201796Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Inventors: Kyohei YAMAGUCHI, Daisuke KAWAKAMI, Hiroyuki HAMASAKI
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Patent number: 10614008Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.Type: GrantFiled: October 3, 2018Date of Patent: April 7, 2020Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
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Publication number: 20200003098Abstract: An exhaust gas purification device is capable of reducing the amount of NOx emissions generated at the time of cold start. An exhaust gas purification device includes a urea injection valve, a metal honeycomb, a temperature sensor, and an SCR catalyst in an exhaust passage. It is possible for an exhaust gas temperature of exhaust gas passing through the metal honeycomb to be increased by the metal honeycomb that is capable of being electrically heated by control executed by a control unit ECU. The exhaust gas temperature is detected by the temperature sensor. Based on a temperature-versus-ammonia adsorption amount profile stored in advance in a storage unit of the control unit ECU, ammonia is pre-adsorbed onto the metal honeycomb and the SCR catalyst, and the metal honeycomb is electrically heated at the time of cold start after the temperature detected by the temperature sensor becomes lower than 150° C.Type: ApplicationFiled: February 8, 2018Publication date: January 2, 2020Applicants: N.E. CHEMCAT CORPORATION, National Agency for Automobile and Land Transport TechnologyInventors: Toshinori OKAJIMA, Makoto NAGATA, Nobunori OKUI, Kyohei YAMAGUCHI
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Publication number: 20190348671Abstract: A hydrogen storage alloy suitable for prescribed pretreatment, that is, pretreatment wherein mechanical pulverization is performed after pulverizing a hydrogen storage alloy and absorbing/desorbing hydrogen is provided. The hydrogen storage alloy comprises a parent phase having a CaCu5-type, that is, an AB5-type crystal structure, wherein the A site is constituted from a rare earth element containing La; and the B site does not contain Co and contains at least Ni, Al, and Mn, with the ratio (Mn/Al) of the content of Mn (molar ratio) to the content of Al (molar ratio) being 0.60 or more and less than 1.56, and the ratio (La/(Mn+Al)) of the content of La (molar ratio) to the total content of the content of Al (molar ratio) and the content of Mn (molar ratio) being more than 0.92.Type: ApplicationFiled: December 20, 2017Publication date: November 14, 2019Inventors: Keisuke MIYANOHARA, Kyohei YAMAGUCHI
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Patent number: 10468677Abstract: Provided is a spinel-type lithium-manganese-containing complex oxide that is related to a 5 V-class spinel, and with which output characteristics and charge-discharge cycle ability can be enhanced while suppressing gas generation. Proposed is a spinel-type lithium-manganese-containing complex oxide comprising at least Li, Mn, O, and two or more other elements, and having an operating potential of 4.5 V or more with respect to a metal Li reference potential, wherein: D50 is 0.5 to 9 ?m; a value of (|mode diameter?D50|/mode diameter)×100 is 0 to 25%; a value of (|mode diameter?D10|/mode diameter)×100 is 20 to 58%; a ratio of average primary particle diameter/D50, which is calculated from an average primary particle diameter calculated from a SEM image and the D50, is 0.20 to 0.99; and a primary particle is a polycrystal.Type: GrantFiled: February 28, 2017Date of Patent: November 5, 2019Assignee: Mitsui Mining & Smelting Co., Ltd.Inventors: Kyohei Yamaguchi, Tetsuya Mitsumoto, Hideaki Matsushima, Shinya Kagei