Patents by Inventor Kyohei Yamaguchi

Kyohei Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11926570
    Abstract: A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO2.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: March 12, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Kyohei Atsuji, Keita Miyanishi, Asumi Nagai, Hirofumi Yamaguchi
  • Publication number: 20230142372
    Abstract: An ABs-type hydrogen storage alloy is provided that has a low Co amount and uses Mm composed of La and Ce, which is capable of preventing a decrease in lifetime characteristics. The hydrogen storage alloy has an ABx composition constituted with an A-site composed of an Mm and a B-site composed of Ni, Co, Mn, and Al, or Ni, Mn, and Al, wherein Mm is composed of La and Ce; the molar ratio of Co is 0.0 or more and 0.11 or less when the molar ratio of Mm is 1.00; the ratio (Al/Mn) of the molar ratio of Al to the molar ratio of Mn is 0.35 to 1.10; and the ratio of the c-axis length to the a-axis length in the CaCu5-type crystal structure is 0.8092 or more.
    Type: Application
    Filed: April 15, 2021
    Publication date: May 11, 2023
    Inventors: Keisuke MIYANOHARA, Kyohei YAMAGUCHI
  • Patent number: 11422960
    Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: August 23, 2022
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
  • Publication number: 20210263869
    Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.
    Type: Application
    Filed: May 13, 2021
    Publication date: August 26, 2021
    Inventors: Kyohei YAMAGUCHI, Daisuke KAWAKAMI, Hiroyuki HAMASAKI
  • Patent number: 11094932
    Abstract: A hydrogen storage alloy suitable for prescribed pretreatment, that is, pretreatment wherein mechanical pulverization is performed after pulverizing a hydrogen storage alloy and absorbing/desorbing hydrogen is provided. The hydrogen storage alloy comprises a parent phase having a CaCu5-type, that is, an AB5-type crystal structure, wherein the A site is constituted from a rare earth element containing La; and the B site does not contain Co and contains at least Ni, Al, and Mn, with the ratio (Mn/Al) of the content of Mn (molar ratio) to the content of Al (molar ratio) being 0.60 or more and less than 1.56, and the ratio (La/(Mn+Al)) of the content of La (molar ratio) to the total content of the content of Al (molar ratio) and the content of Mn (molar ratio) being more than 0.92.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: August 17, 2021
    Inventors: Keisuke Miyanohara, Kyohei Yamaguchi
  • Patent number: 11047282
    Abstract: An exhaust gas purification device is capable of reducing the amount of NOx emissions generated at the time of cold start. An exhaust gas purification device includes a urea injection valve, a metal honeycomb, a temperature sensor, and an SCR catalyst in an exhaust passage. It is possible for an exhaust gas temperature of exhaust gas passing through the metal honeycomb to be increased by the metal honeycomb that is capable of being electrically heated by control executed by a control unit ECU. The exhaust gas temperature is detected by the temperature sensor. Based on a temperature-versus-ammonia adsorption amount profile stored in advance in a storage unit of the control unit ECU, ammonia is pre-adsorbed onto the metal honeycomb and the SCR catalyst, and the metal honeycomb is electrically heated at the time of cold start after the temperature detected by the temperature sensor becomes lower than 150° C.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: June 29, 2021
    Assignee: N.E. CHEMCAT CORPORATION
    Inventors: Toshinori Okajima, Makoto Nagata, Nobunori Okui, Kyohei Yamaguchi
  • Patent number: 11036662
    Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: June 15, 2021
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
  • Patent number: 10954896
    Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and additional activated carbon. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber directly or via an additional chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The additional activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. A ratio of a volume of the activated carbon stored in the main chamber to a volume of the activated carbon stored in the sub chamber (Vmain/Vsub) is more than 7 and equal to or less than 10.
    Type: Grant
    Filed: January 16, 2020
    Date of Patent: March 23, 2021
    Assignee: FUTABA INDUSTRIAL CO., LTD.
    Inventor: Kyohei Yamaguchi
  • Publication number: 20200271077
    Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and more activated carbon. The charge port takes in evaporated fuel. The purge port discharges the evaporated fuel. The atmosphere port is open to the atmosphere. The charge port and the purge port are connected to the main chamber. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The more activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. An activated carbon volume ratio (Vmain/Vsub) is 5.5 to 7.
    Type: Application
    Filed: May 13, 2020
    Publication date: August 27, 2020
    Inventors: Takuya Nakagawa, Masahito Hosoi, Kyohei Yamaguchi
  • Publication number: 20200248655
    Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and additional activated carbon. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber directly or via an additional chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The additional activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. A ratio of a volume of the activated carbon stored in the main chamber to a volume of the activated carbon stored in the sub chamber (Vmain/Vsub) is more than 7 and equal to or less than 10.
    Type: Application
    Filed: January 16, 2020
    Publication date: August 6, 2020
    Inventor: Kyohei Yamaguchi
  • Publication number: 20200201796
    Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.
    Type: Application
    Filed: March 2, 2020
    Publication date: June 25, 2020
    Inventors: Kyohei YAMAGUCHI, Daisuke KAWAKAMI, Hiroyuki HAMASAKI
  • Patent number: 10614008
    Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: April 7, 2020
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
  • Publication number: 20200003098
    Abstract: An exhaust gas purification device is capable of reducing the amount of NOx emissions generated at the time of cold start. An exhaust gas purification device includes a urea injection valve, a metal honeycomb, a temperature sensor, and an SCR catalyst in an exhaust passage. It is possible for an exhaust gas temperature of exhaust gas passing through the metal honeycomb to be increased by the metal honeycomb that is capable of being electrically heated by control executed by a control unit ECU. The exhaust gas temperature is detected by the temperature sensor. Based on a temperature-versus-ammonia adsorption amount profile stored in advance in a storage unit of the control unit ECU, ammonia is pre-adsorbed onto the metal honeycomb and the SCR catalyst, and the metal honeycomb is electrically heated at the time of cold start after the temperature detected by the temperature sensor becomes lower than 150° C.
    Type: Application
    Filed: February 8, 2018
    Publication date: January 2, 2020
    Applicants: N.E. CHEMCAT CORPORATION, National Agency for Automobile and Land Transport Technology
    Inventors: Toshinori OKAJIMA, Makoto NAGATA, Nobunori OKUI, Kyohei YAMAGUCHI
  • Publication number: 20190348671
    Abstract: A hydrogen storage alloy suitable for prescribed pretreatment, that is, pretreatment wherein mechanical pulverization is performed after pulverizing a hydrogen storage alloy and absorbing/desorbing hydrogen is provided. The hydrogen storage alloy comprises a parent phase having a CaCu5-type, that is, an AB5-type crystal structure, wherein the A site is constituted from a rare earth element containing La; and the B site does not contain Co and contains at least Ni, Al, and Mn, with the ratio (Mn/Al) of the content of Mn (molar ratio) to the content of Al (molar ratio) being 0.60 or more and less than 1.56, and the ratio (La/(Mn+Al)) of the content of La (molar ratio) to the total content of the content of Al (molar ratio) and the content of Mn (molar ratio) being more than 0.92.
    Type: Application
    Filed: December 20, 2017
    Publication date: November 14, 2019
    Inventors: Keisuke MIYANOHARA, Kyohei YAMAGUCHI
  • Patent number: 10468677
    Abstract: Provided is a spinel-type lithium-manganese-containing complex oxide that is related to a 5 V-class spinel, and with which output characteristics and charge-discharge cycle ability can be enhanced while suppressing gas generation. Proposed is a spinel-type lithium-manganese-containing complex oxide comprising at least Li, Mn, O, and two or more other elements, and having an operating potential of 4.5 V or more with respect to a metal Li reference potential, wherein: D50 is 0.5 to 9 ?m; a value of (|mode diameter?D50|/mode diameter)×100 is 0 to 25%; a value of (|mode diameter?D10|/mode diameter)×100 is 20 to 58%; a ratio of average primary particle diameter/D50, which is calculated from an average primary particle diameter calculated from a SEM image and the D50, is 0.20 to 0.99; and a primary particle is a polycrystal.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: November 5, 2019
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Kyohei Yamaguchi, Tetsuya Mitsumoto, Hideaki Matsushima, Shinya Kagei
  • Patent number: 10446842
    Abstract: Provided is a new 5 V class spinel-type lithium manganese-containing composite oxide which enables the expansion of a high potential capacity region and the suppression of gas generation. The 5 V class spinel-type lithium manganese-containing composite oxide has an operating potential of 4.5 V or more at a metal Li reference potential, and contains Li, Mn, O and two or more other elements. The spinel-type lithium manganese-containing composite oxide is characterized in that, in an electronic diffraction image from a transmission electron microscope (TEM), a diffraction spot observed in the Fd-3m structure as well as a diffraction spot not observed in the Fd-3m structure are confirmed.
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: October 15, 2019
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Tetsuya Mitsumoto, Kyohei Yamaguchi, Toshikazu Matsuyama, Hideaki Matsushima, Shinya Kagei
  • Publication number: 20190186426
    Abstract: A canister includes a charge port, a purge port, an atmosphere port, a main chamber, a sub chamber, activated carbon, and more activated carbon. The charge port takes in evaporated fuel. The purge port discharges the evaporated fuel. The atmosphere port is open to the atmosphere. The charge port and the purge port are connected to the main chamber. The sub chamber communicates with the main chamber. The atmosphere port is connected to the sub chamber. The activated carbon is stored in a main volume (Vmain) in the main chamber. The more activated carbon is stored in a sub volume (Vsub) in the sub chamber. A ratio of a length L in a gas flow direction to an equivalent diameter D in a section perpendicular to the gas flow direction is 2 or more for the sub chamber. An activated carbon volume ratio (Vmain/Vsub) is 5.5 to 7.
    Type: Application
    Filed: December 14, 2018
    Publication date: June 20, 2019
    Inventors: Takuya Nakagawa, Masahito Hosoi, Kyohei Yamaguchi
  • Publication number: 20190163655
    Abstract: A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods. If the monitoring type indicates an asserted state of the interrupt signal, the interrupt monitoring circuit monitors the asserted state. If a first duration of the continuous asserted state exceeds the first monitoring period, the interrupt monitoring circuit detects the state as a failure. If the monitoring type indicates a negated state of the interrupt signal, the interrupt monitoring circuit monitors the negated state. If a second duration of the continuous negated state exceeds the second monitoring period, the interrupt monitoring circuit detects the state as a failure.
    Type: Application
    Filed: October 3, 2018
    Publication date: May 30, 2019
    Inventors: Kyohei YAMAGUCHI, Daisuke KAWAKAMI, Hiroyuki HAMASAKI
  • Patent number: 10276867
    Abstract: Provided is a new 5 V-class spinel-type lithium-manganese-containing composite oxide capable of achieving both the expansion of a high potential capacity region and the suppression of gas generation. Proposed is the spinel-type lithium-manganese-containing composite oxide comprising Li, Mn, O and two or more other elements, and having an operating potential of 4.5 V or more at a metal Li reference potential, wherein a peak is present in a range of 14.0 to 16.5° at 2?, in an X-ray diffraction pattern measured by a powder X-ray diffractometer (XRD) using CuK?1 ray.
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: April 30, 2019
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Tetsuya Mitsumoto, Kyohei Yamaguchi, Toshikazu Matsuyama, Hideaki Matsushima, Shinya Kagei
  • Publication number: 20190051900
    Abstract: Provided is a spinel-type lithium-manganese-containing complex oxide that is related to a 5 V-class spinel, and with which output characteristics and charge-discharge cycle ability can be enhanced while suppressing gas generation. Proposed is a spinel-type lithium-manganese-containing complex oxide comprising at least Li, Mn, O, and two or more other elements, and having an operating potential of 4.5 V or more with respect to a metal Li reference potential, wherein: D50 is 0.5 to 9 ?m; a value of (|mode diameter?D50|/mode diameter)×100 is 0 to 25%; a value of (|mode diameter?D10|/mode diameter)×100 is 20 to 58%; a ratio of average primary particle diameter/D50, which is calculated from an average primary particle diameter calculated from a SEM image and the D50, is 0.20 to 0.99; and a primary particle is a polycrystal.
    Type: Application
    Filed: February 28, 2017
    Publication date: February 14, 2019
    Inventors: Kyohei Yamaguchi, Tetsuya Mitsumoto, Hideaki Matsushima, Shinya Kagei